×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
西安交通大学 [4]
内容类型
会议论文 [2]
期刊论文 [2]
发表日期
2018 [4]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共4条,第1-4条
帮助
限定条件
发表日期:2018
专题:西安交通大学
第一署名单位
第一作者单位
通讯作者单位
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Temperature Dependence of Dynamic Performance Characterization of 1.2 kV SiC Power MOSFETs compared with Si IGBTs for Wide Temperature Applications
期刊论文
IEEE Transactions on Power Electronics, 2018
作者:
Qi, Jinwei
;
Yang, Xu
;
Li, Xin
;
Tian, Kai
;
Mao, Zhangsong
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2019/11/19
Cryogenic temperatures
Dynamic resistance
High-efficiency power conversions
High-frequency applications
Power conversion systems
SiC MOSFET
Switching characterization
Temperature applications
Paralleled GaN DHEMTs integrated cascode GaN switch for high-current applications
期刊论文
ELECTRONICS LETTERS, 2018, 卷号: 54, 页码: 899-900
作者:
Zhu, Tianhua
;
Zhuo, Fang
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2019/11/19
high-current applications
wire bonding
power density
avalanche-suppressed method
gallium compounds
GaN
integral package
lead bonding
single gate driver
field effect transistor switches
MOSFET
DHEMT integrated cascode switch
high electron mobility transistors
paralleled depletion-mode high-electron-mobility transistors
wide band gap semiconductors
cascode transistors
silicon-MOSFET
Si
potential unbalanced current sharing
cost reduction
optimised symmetric configuration
high-current cascode gallium nitride switch
III-V semiconductors
semiconductor device packaging
Design and Testing of 1 kV H-bridge Power Electronics Building Block Based on 1.7 kV SiC MOSFET Module
会议论文
作者:
Wang, Jun
;
Burgos, Rolando
;
Boroyevich, Dushan
;
Liu, Zeng
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2019/11/26
switching-cycle control
smart gate driver
digital control system
Power electronics building block
SiC MOSFET
Design and Testing of 1 kV H-bridge Power Electronics Building Block Based on 1.7 kV SiC MOSFET Module
会议论文
作者:
Wang, Jun
;
Burgos, Rolando
;
Boroyevich, Dushan
;
Liu, Zeng
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/11/26
Auxiliary power supply
Design considerations
Gate drivers
H bridge circuits
Modular converters
Power Electronics Building Blocks
Si-CMOS
Switching cycles
©版权所有 ©2017 CSpace - Powered by
CSpace