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Temperature Dependence of Dynamic Performance Characterization of 1.2 kV SiC Power MOSFETs compared with Si IGBTs for Wide Temperature Applications 期刊论文
IEEE Transactions on Power Electronics, 2018
作者:  Qi, Jinwei;  Yang, Xu;  Li, Xin;  Tian, Kai;  Mao, Zhangsong
收藏  |  浏览/下载:10/0  |  提交时间:2019/11/19
Paralleled GaN DHEMTs integrated cascode GaN switch for high-current applications 期刊论文
ELECTRONICS LETTERS, 2018, 卷号: 54, 页码: 899-900
作者:  Zhu, Tianhua;  Zhuo, Fang
收藏  |  浏览/下载:16/0  |  提交时间:2019/11/19
Design and Testing of 1 kV H-bridge Power Electronics Building Block Based on 1.7 kV SiC MOSFET Module 会议论文
作者:  Wang, Jun;  Burgos, Rolando;  Boroyevich, Dushan;  Liu, Zeng
收藏  |  浏览/下载:10/0  |  提交时间:2019/11/26
Design and Testing of 1 kV H-bridge Power Electronics Building Block Based on 1.7 kV SiC MOSFET Module 会议论文
作者:  Wang, Jun;  Burgos, Rolando;  Boroyevich, Dushan;  Liu, Zeng
收藏  |  浏览/下载:4/0  |  提交时间:2019/11/26


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