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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 发表日期：2017     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Source-drain resistance characteristics of back-channel etched amorphous InGaZnO thin film transistors with TiO2:Nb protective layer 期刊论文 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017 Zhang, Letao; Zhou, Xiaoliang; Chang, Baozhu; Wang, Longyan; Xiao, Yuxiang; He, Hongyu; Zhang, Shengdong 收藏  |  浏览/下载：8/0  |  提交时间：2017/12/03 Amorphous indium gallium zinc oxide  Thin film transistors  Source-drain parasitic resistance  TiO2:Nb  Films thickness  THRESHOLD VOLTAGE  ANATASE TIO2  PERFORMANCE  SHIFT  TFTS   Nb Doped TiO2 Protected Back-Channel-Etched Amorphous InGaZnO Thin Film Transistors 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2017 Zhang, Letao; Zhou, Xiaoliang; Yang, Huan; He, Hongyu; Wang, Longyan; Zhang, Min; Zhang, Shengdong 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 Amorphous indium gallium zinc oxide (a-IGZO)  thin film transistors (TFTs)  back-channel-etch (BCE) process  Nb doped TiO2  THRESHOLD VOLTAGE  CARBON-NANOFILM  BARRIER LAYER  PERFORMANCE  SHIFT   Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 期号: 3, 页码: 1038-1044 作者:  Cui, Peng;  Liu, Huan;  Lin, Wei;  Lin, Zhaojun;  Cheng, Aijie 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/11 AlGaN/GaNheterostructureFETs (HFETs)  gate bias  gate length  parasitic  source access resistance  polarization Coulomb field scattering   Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 9 作者:  Liu, Yan;  Lin, Zhao-Jun;  Lv, Yuan-Jie;  Cui, Peng;  Fu, Chen 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/11 AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs)  parasitic source resistance  polarization Coulomb field scattering   Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 Chinese Physics B, 2017, 期号: 09, 页码: 393-399 作者:  Liu Y(刘艳);  Lin ZJ(林兆军);  Lv YJ(吕元杰);  Cui P(崔鹏);  Fu C(付晨) 收藏  |  浏览/下载：13/0  |  提交时间：2019/12/12 Al Ga N/Al N/Ga N heterostructure field-effect transistors(HFETs)  parasitic source resistance  polarization Coulomb field scattering