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Influence of highly-charged Bi-209(33+) irradiation on structure and optoelectric characteristics of GaN epilayer 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2017, 卷号: 406, 页码: 571-577
作者:  Li, Jj.;  Zhang, C. H.;  Zhang, L. Q.;  Song, Y.;  Yan, T. X.
收藏  |  浏览/下载:10/0  |  提交时间:2018/05/08


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