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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 发表日期：2016     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The immunity of doping-less junctionless transistor variations including the line edge roughness 会议论文 Hong Kong, Hong kong, August 3, 2016 - August 5, 2016 作者:  Wan, Wenbo;  Lou, Haijun;  Xiao, Ying;  Lin, Xinnan 收藏  |  浏览/下载：24/0  |  提交时间：2020/11/15 Etching  Semiconductor doping  Transistors  Charge plasmas  Electrical characteristic  Etching process  Junctionless  Junctionless transistors  Line Edge Roughness  ON/OFF current ratio  variation   A Simple Method to Decompose the Amplitudes of Different Random Variation Sources in FinFET Technology 其他 2016-01-01 Jiang, Xiaobo; Wang, Runsheng; Huang, Ru; Wang, Xingsheng; Cheng, Binjie; Asenov, Asen 收藏  |  浏览/下载：1/0  |  提交时间：2017/12/03 LINE-EDGE ROUGHNESS  VARIABILITY  LWR  LER   A Device-Level Characterization Approach to Quantify the Impacts of Different Random Variation Sources in FinFET Technology 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2016 Jiang, Xiaobo; Guo, Shaofeng; Wang, Runsheng; Wang, Xingsheng; Cheng, Binjie; Asenov, Asen; Huang, Ru 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/04 FinFET  random variation  characterization  line-edge roughness (LER)  metal gate granularity (MGG)  LINE-EDGE ROUGHNESS  VARIABILITY  LWR  LER   The Immunity of Doping-less Junctionless Transistor Variations Including the Line Edge Roughness 会议论文 作者:  Wan, Wenbo;  Lou, Haijun;  Xiao, Ying;  Lin, Xinnan 收藏  |  浏览/下载：14/0  |  提交时间：2019/11/15 charge-plasma  Junctionless  LER  variation