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华南理工大学 [2]
北京大学 [1]
兰州理工大学 [1]
苏州纳米技术与纳米仿... [1]
山东大学 [1]
河南大学 [1]
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期刊论文 [7]
发表日期
2016 [7]
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Electronic structure and optical property studies of wurtzite AgInS2 doped by tin
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 678, 页码: 439-443
作者:
Yin, Jianbo
;
Lu, Xuefeng
;
Dong, Qizheng
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/11/15
Metal
Doping
Sulfides
Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 681
作者:
Yang, J
;
Zhao, DG
;
Jiang, DS
;
Chen, P
;
Zhu, JJ
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  |  
浏览/下载:15/0
  |  
提交时间:2017/03/11
Sn-doped ZnO thin-film transistors with AZO, TZO and Al heterojunction source/drain contacts
期刊论文
ELECTRONICS LETTERS, 2016
Zhang, Yi
;
Han, Dedong
;
Huang, Lingling
;
Dong, Junchen
;
Cong, Yingying
;
Cui, Guodong
;
Zhang, Xiaomi
;
Zhang, Xing
;
Zhang, Shengdong
;
Wang, Yi
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2017/12/03
thin film transistors
electrical contacts
tin
zinc compounds
indium compounds
tin compounds
tin-doped zinc oxide thin-film transistors
heterojunction source-drain contacts
bottom gate
top contact thin-film transistors
glass substrate
indium tin oxide thin films
alumni zinc oxide thin films
AZO thin films
aluminium thin films
AZO S-D electrode
saturation mobility
subthreshold slope
on-off current ratio
output characteristic
parasitic resistance
contact performance
t
Influence of in content in InGaN barriers on crystalline quality and carrier transport of GaN-based light-emitting diodes (EI收录)
期刊论文
Journal of Physics D: Applied Physics, 2016, 卷号: 49
作者:
Lin, Zhiting[1,2]
;
Wang, Haiyan[1,2]
;
Lin, Yunhao[1,2]
;
Yang, Meijuan[1,2]
;
Wang, Wenliang[1,2]
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/04/24
Carrier concentration
Crystalline materials
Diodes
Efficiency
Gallium alloys
Gallium nitride
Quantum efficiency
Semiconducting indium compounds
Semiconductor quantum wells
Effect of post treatment for cu-cr source/drain electrodes on a-igzo tfts (EI收录)
期刊论文
Materials, 2016, 卷号: 9, 页码: 1-5
作者:
Hu, Shiben[1]
;
Fang, Zhiqiang[1]
;
Ning, Honglong[1]
;
Tao, Ruiqiang[1]
;
Liu, Xianzhe[1]
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2019/04/24
Amorphous films
Amorphous semiconductors
Carrier concentration
Copper
Copper alloys
Electrodes
Gallium alloys
Indium
Indium alloys
Interfaces (materials)
Semiconducting indium compounds
Semiconductor materials
High performance InGaZnO-based Schottky diodes fabricated at room temperature
期刊论文
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 7-9, 2016, 卷号: 13, 期号: 7-9, 页码: 618-622
作者:
Yan, Linlong
;
Xin, Qian
;
Du, Lulu
;
Zhang, Jiawei
;
Luo, Yi
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  |  
浏览/下载:3/0
  |  
提交时间:2019/12/17
indium gallium zinc oxide (InGaZnO or IGZO)
Schottky diodes
radio-frequency magnetron sputtering
Fabrication of high quality copper indium disulphide absorbers by bell-like wave modulated electrodeposition
期刊论文
MATERIALS RESEARCH BULLETIN, 2016, 卷号: 76, 页码: 85-93
作者:
Cheng, Ke[1]
;
Wang, Xiaoyun[2]
;
Liu, Jingjing[3]
;
Huang, Yuqian[4]
;
Xue, Ming[5]
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/12/23
Chalcogenide
Intermetallic compounds
Optical properties
Electron microscopy
Raman spectroscopy
Electrical properties
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