|
已选(0)清除
条数/页： 排序方式：
|
| Investigation of optical properties of Cu/Ni multilayer nanowires embedded in etched ion-track template 会议论文
作者: Xie, Lu; Yao, Huijun; Duan, Jinglai; Chen, Yonghui; Lyu, Shuangbao
  收藏 | 浏览/下载：29/0 | 提交时间：2018/08/20
|
| Investigation of optical properties of Cu/Ni multilayer nanowires embedded in etched ion-track template 会议论文
作者: Xie, Lu; Yao, Huijun; Duan, Jinglai; Chen, Yonghui; Lyu, Shuangbao
收藏 | 浏览/下载：39/0 | 提交时间：2018/08/20
|
| Incremental PCANet: A Lifelong Learning Framework to Achieve the Plasticity of both Feature and Classifier Constructions 会议论文
Beijing, China, 28-30 November 2016
作者: Wang-Li Hao; Zhaoxiang Zhang
收藏 | 浏览/下载：18/0 | 提交时间：2017/02/09
|
| Raman spectroscopy of graphene irradiated with highly charged ions 会议论文
作者: Sun, Mengli; Yang, Di; Chen, Hao; Cheng, Rui; Zhang, Jiandong
收藏 | 浏览/下载：25/0 | 提交时间：2018/08/20
|
| Raman spectroscopy of graphene irradiated with highly charged ions 会议论文
作者: Sun, Mengli; Yang, Di; Zhang, Duofei; Peng, Haibo; Zhao, Yongtao
收藏 | 浏览/下载：32/0 | 提交时间：2018/08/20
|
| Development of MEMS IR source by compound release process with nano-scale silicon forest radiation layer 会议论文
作者: Sun XL(孙西龙); Chen DP(陈大鹏); Wang WB(王玮冰); Mao HY(毛海央); Yang CY(杨成樾)
收藏 | 浏览/下载：16/0 | 提交时间：2017/05/18 |
| Analysis of a Si-nanocrystal strip-loaded waveguide for nonlinear applications 会议论文
21st optoelectronics and communications conference, oecc 2016 - held jointly with 2016 international conference on photonics in switching, ps 2016, niigata, japan, 2016-07-03
作者: Wei, Pengjiang; Wang, S.H.; Little, Brent E.; Chu, Sai Tak
收藏 | 浏览/下载：35/0 | 提交时间：2016/12/22
|
| A combined wafer bonding method using spin-coated water glass adhesive layer and spot pressing bonding technique 会议论文
作者: Xu Y(徐杨); Wang YH(王英辉); Liu HG(刘洪刚); Chen DP(陈大鹏)
收藏 | 浏览/下载：12/0 | 提交时间：2017/05/18 |
| Positive bias temperature instability degradation of buried InGaAsChannel n-MOSFETs with InGaP barrier layer and Al2O3 dielectric 会议论文
作者: Wang SK(王盛凯); Chang HD(常虎东); Sun B(孙兵)
收藏 | 浏览/下载：5/0 | 提交时间：2017/05/18 |
| 100-nm gate-length enhancement mode InGaAs MOSFETs with InGaP interfacial layer and Al2O3 as gate oxide 会议论文
作者: Sun B(孙兵); Chang HD(常虎东); Wang SK(王盛凯); Gong ZJ(龚著靖)
收藏 | 浏览/下载：8/0 | 提交时间：2017/05/18 |
