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Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high- k /metal gate last process 期刊论文
Chinese Physics B, 2015
作者:  Wang WW(王文武);  Wang YR(王艳蓉)
收藏  |  浏览/下载:12/0  |  提交时间:2016/05/31
Analysis on the Thickness and Temperature Dependent DC Breakdown of Low Density Polyethylene 会议论文
作者:  Min, Daomin;  Li, Shengtao;  Ohki, Yoshimichi
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/02
Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 卷号: 62, 期号: 10, 页码: 8
作者:  Hua, MY;  Liu, C;  Yang, S;  Liu, SH;  Fu, K
收藏  |  浏览/下载:33/0  |  提交时间:2015/12/31


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