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浏览/检索结果: 共28条，第1-10条 帮助 限定条件 发表日期：2011    学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure 期刊论文 journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125 作者:  Wang C 收藏  |  浏览/下载：69/3  |  提交时间：2011/07/05 Hydrogenated nanocrystalline silicon  Buffer layer  i/p interface  Solar cells  OPEN-CIRCUIT VOLTAGE  A-SI-H  P/I-INTERFACE  MICROCRYSTALLINE SILICON  VAPOR-DEPOSITION  FILMS  CAPACITANCE  EFFICIENCY  CRYSTALLINE  TEMPERATURE   Effect of gas pressure on the properties of silicon thin film 期刊论文 gongneng cailiao/journal of functional materials, 2011, 卷号: 42, 期号: 8, 页码: 1489-1491 Hao, Hui-Ying; Li, Wei-Min; Zeng, Xiang-Bo; Kong, Guang-Lin; Liao, Xian-Bo 收藏  |  浏览/下载：45/0  |  提交时间：2012/06/14 Amorphous films  Chemical vapor deposition  Deposition  Microcrystalline silicon  Microstructure  Photoelectricity  Plasma deposition  Plasma enhanced chemical vapor deposition  Pressure effects  Semiconducting silicon compounds  Transport properties   MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文 journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117 作者:  Jia CH;  Song HP 收藏  |  浏览/下载：120/2  |  提交时间：2011/07/05 Anisotropy  Crystal morphology  Metalorganic chemical vapor deposition  a-Plane InN  INDIUM NITRIDE  MOVPE GROWTH  CUBIC INN  SAPPHIRE  GAN  MBE   Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy 期刊论文 semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75010 作者:  Yang T;  Yang XG;  Wang KF 收藏  |  浏览/下载：67/2  |  提交时间：2011/07/05 HIGH-DENSITY  TEMPERATURE-DEPENDENCE  SELF-FORMATION  LAYERS  WELL  MBE   Enhanced absorption in nanocrystalline silicon thin film solar cells using surface plasmon polaritons 期刊论文 icmree2011 - proceedings 2011 international conference on materials for renewable energy and environment, 2011, 卷号: 1, 页码: 242-246 Hao, Huiying; Li, Weimin; Xing, Jie; Fan, Zhenjun, 收藏  |  浏览/下载：12/0  |  提交时间：2012/06/14 Absorption  Electromagnetic wave polarization  Energy gap  Gold  Light absorption  Nanostructured materials  Optical properties  Particle optics  Phonons  Photons  Plasmons  Quantum theory  Scattering  Semiconducting silicon compounds  Silicon solar cells  Silver  Solar absorbers  Solar energy  Surface plasmon resonance  Surfaces  Thin films   Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.53519 Yu JL; Chen YH; Jiang CY; Liu Y; Ma H 收藏  |  浏览/下载：39/4  |  提交时间：2011/07/05 MOLECULAR-BEAM EPITAXY  INVERSION ASYMMETRY  HETEROSTRUCTURES  SEGREGATION  INTERFACE   Optimization of double nanocrystalline silicon p-layers for amorphous silicon solar cells 期刊论文 cailiao gongcheng/journal of materials engineering, 2011, 期号: 8, 页码: 5-7+13 Liu, Shi-Yong; Zeng, Xiang-Bo; Peng, Wen-Bo; Yao, Wen-Jie; Xie, Xiao-Bing; Yang, Ping; Wang, Chao; Wang, Zhan-Guo 收藏  |  浏览/下载：32/0  |  提交时间：2012/06/14 Amorphous films  Chemical vapor deposition  Energy gap  High resolution electron microscopy  High resolution transmission electron microscopy  Hydrogen  Nanocrystalline silicon  Optical band gaps  Plasma deposition  Plasma enhanced chemical vapor deposition  Raman spectroscopy  Semiconducting silicon compounds  Solar power generation  Thin films  Transmission electron microscopy   Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311 作者:  Xu B;  Zhou GY;  Ye XL;  Zhang HY 收藏  |  浏览/下载：55/5  |  提交时间：2011/07/05 SELF-ORGANIZED ISLANDS  MOLECULAR-BEAM-EPITAXY  OPTICAL-PROPERTIES  SURFACES  EMISSION  DENSITY  SIZE   Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文 journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145 作者:  Duan RF 收藏  |  浏览/下载：108/4  |  提交时间：2011/07/05 CL  PL  Stacking fault  HVPE  GaN  Nonpolar  CHEMICAL-VAPOR-DEPOSITION  ACCEPTOR PAIR EMISSION  PHASE EPITAXY  GROWN GAN  SEMICONDUCTORS  SAPPHIRE  FILMS  NITRIDE   Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy 期刊论文 applied surface science, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112 作者:  Shi K;  Jiao CM;  Song HP 收藏  |  浏览/下载：96/7  |  提交时间：2011/07/05 Valence band offset  GaN/diamond heterojunction  XPS  Conduction band offset  CHEMICAL-VAPOR-DEPOSITION  ALGAN/GAN HEMTS  DIAMOND  GAN  FILMS