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浏览/检索结果: 共95条，第1-10条 帮助 限定条件 发表日期：2010    学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Donor defect in P-diffused bulk ZnO single crystal 会议论文 29th international conference on physics of semiconductors, rio de janeiro, brazil, 2009 Zhao YW (Zhao Youwen); Zhang R (Zhang Rui); Zhang F (Zhang Fan); Dong ZY (Dong Zhiyuan); Yang J (Yang Jun) 收藏  |  浏览/下载：465/158  |  提交时间：2010/10/11 Zinc Oxide  doping  defect   STUDY OF MICROSTRUCTURE AND DEFECTS IN HYDROGENATED MICROCRYSTALLINE SILICON FILMS 会议论文 34th ieee photovoltaic specialists conference, philadelphia, pa, 2009 Peng WB (Peng Wenbo); Zeng XB (Zeng Xiangbo); Liu SY (Liu Shiyong); Xiao HB (Xiao Haibo); Kong GL (Kong Guanglin); Yu YD (Yu Yude); Liao XB (Liao Xianbo) 收藏  |  浏览/下载：253/64  |  提交时间：2010/08/16 Evaluating 0.53 eVGaInAsSbthermophotovoltaic diode based on an analytical absorption model 期刊论文 semiconductor science and technology, 2010, 卷号: 25, 期号: 9, 页码: art. no. 095002 Wang Y (Wang Y.); Chen NF (Chen N. F.); Zhang XW (Zhang X. W.); Huang TM (Huang T. M.); Yin ZG (Yin Z. G.); Bai YM (Bai Y. M.) 收藏  |  浏览/下载：171/19  |  提交时间：2010/09/20 OPTICAL DIELECTRIC FUNCTION  DISPERSION-RELATIONS  CARRIER MOBILITIES  PHASE EPITAXY  DOPED GAAS  DEVICES  GASB  INP  ALXGA1-XAS  INGAASSB   Strain-Compensated InGaAs/InAlAs Quantum Cascade Detector of 4.5 mu m Operating at Room Temperature 期刊论文 chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 038501 Kong N (Kong Ning); Liu JQ (Liu Jun-Qi); Li L (Li Lu); Liu FQ (Liu Feng-Qi); Wang LJ (Wang Li-Jun); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：196/33  |  提交时间：2010/04/22 WELL INFRARED PHOTODETECTORS  LASER   Electropolymerized poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) film on ITO glass and its application in photovoltaic device 期刊论文 solar energy materials and solar cells, 94 (2): feb 2010, 2010, 卷号: 94, 期号: 2, 页码: 390-394 Yan J (Yan Jun); Sun CH (Sun Chenghua); Tan; FR (Tan Furui); Hu XJ (Hu Xiujie); Chen P (Chen Ping); Qu SC (Qu Shengchun); Zhou SY (Zhou Shuyun); Xu JK (Xu Jingkun) 收藏  |  浏览/下载：130/28  |  提交时间：2010/04/13 PEDOT films  ITO  Electrochemically polymerized  Solar Cells  Energy conversion efficiencies  POLYMER SOLAR-CELLS  INDIUM-TIN OXIDE  CONJUGATED POLYMER  ELECTROCHEMICAL COPOLYMERIZATION  CONDUCTING POLYMERS  3,4-ETHYLENEDIOXYTHIOPHENE  NUCLEATION  ELECTRODES  PRECURSOR  ANODES   Impact of symmetrized and Burt-Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 8, 页码: art. no. 088102 Gu YX (Gu Yong-Xian); Yang T (Yang Tao); Ji HM (Ji Hai-Ming); Xu PF (Xu Peng-Fei); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：141/24  |  提交时间：2010/09/07 quantum dot  symmetrized Hamiltonian  Burt-Foreman Hamiltonian  finite element method  spurious solutions  EFFECTIVE-MASS APPROXIMATION  P THEORY   High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy 期刊论文 chinese physics letters, 2010, 卷号: 27, 期号: 2, 页码: art. no. 027801 Ji HM (Ji Hai-Ming); Yang T (Yang Tao); Cao YL (Cao Yu-Lian); Xu PF (Xu Peng-Fei); Gu YX (Gu Yong-Xian); Ma; WQ (Ma Wen-Quan); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：151/30  |  提交时间：2010/04/13 THRESHOLD CURRENT  ROOM-TEMPERATURE  DEPENDENCE  PHOTOLUMINESCENCE   Photoexcited charge current for the presence of pure spin current 期刊论文 applied physics letters, 2010, 卷号: 96, 期号: 26, 页码: art. no. 262108 Liu Y (Liu Yu); Chen YH (Chen Yonghai); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：221/46  |  提交时间：2010/09/07 ELECTRONIC MEASUREMENT  SEMICONDUCTORS  TRANSPORT   Raman scattering study of vibrational modes and hole concentration in GaxMn1-xSb 期刊论文 semiconductor science and technology, 2010, 卷号: 25, 期号: 9, 页码: art. no. 095010 Islam MR (Islam M. R.); Hasan MM (Hasan M. M.); Chen N (Chen N.); Fukuzawa M (Fukuzawa M.); Yamada M (Yamada M.) 收藏  |  浏览/下载：261/25  |  提交时间：2010/09/20 DILUTED MAGNETIC SEMICONDUCTORS  PHONON  FERROMAGNETISM  TEMPERATURE  GA1-XMNXAS  SPECTRA  STRAIN  LAYERS  GAAS  SPIN   Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy 期刊论文 journal of applied physics, 2010, 卷号: 107, 期号: 10, 页码: art. no. 104510 Xu XQ (Xu Xiaoqing); Liu XL (Liu Xianglin); Guo Y (Guo Yan); Wang J (Wang Jun); Song HP (Song Huaping); Yang SY (Yang Shaoyan); Wei HY (Wei Hongyuan); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：184/49  |  提交时间：2010/06/18 PHOTOEMISSION-SPECTROSCOPY  PRECISE DETERMINATION  GA-FACE  SURFACE  ALN  HETEROJUNCTIONS  DISCONTINUITY  LEVEL