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浏览/检索结果: 共3条，第1-3条 帮助 限定条件 发表日期：2009     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Well-width dependence of in-plane optical anisotropy in (001) gaas/algaas quantum wells induced by in-plane uniaxial strain and interface asymmetry 期刊论文 Journal of applied physics, 2009, 卷号: 105, 期号: 10, 页码: 6 作者:  Tang, C. G.;  Chen, Y. H.;  Xu, B.;  Ye, X. L.;  Wang, Z. G. 收藏  |  浏览/下载：15/0  |  提交时间：2019/05/12 Aluminium compounds  Gallium arsenide  Iii-v semiconductors  Internal stresses  Reflectivity  Semiconductor heterojunctions  Semiconductor quantum wells   Gain characteristics of the InGaAs strained quantum wells with GaAs, AlGaAs, and GaAsP barriers in vertical-external-cavity surface-emitting lasers 期刊论文 应用物理杂志, 2009 Zhang, Peng; Song, Yanrong; Tian, Jinrong; Zhang, Xinping; Zhang, Zhigang 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/12 aluminium compounds  band structure  gallium arsenide  gallium compounds  III-V semiconductors  indium compounds  optical pumping  quantum well lasers  surface emitting lasers  PUMPED SEMICONDUCTOR-LASERS  BAND OFFSETS  DISK LASER  HIGH-POWER  ALLOYS  NM   Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry 期刊论文 journal of applied physics, 2009, 卷号: 105, 期号: 10, 页码: art. no. 103108 作者:  Xu B;  Ye XL 收藏  |  浏览/下载：70/0  |  提交时间：2010/03/08 aluminium compounds  gallium arsenide  III-V semiconductors  internal stresses  reflectivity  semiconductor heterojunctions  semiconductor quantum wells