QQ客服 官方微博 反馈留言

浏览/检索结果: 共11条，第1-10条 帮助 限定条件 发表日期：2009    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Binding energy and spin-orbit splitting of a hydrogenic donor impurity in algan/gan triangle-shaped potential quantum well 期刊论文 Nanoscale research letters, 2009, 卷号: 4, 期号: 11, 页码: 1315-1318 作者:  Wang, Jun;  Li, Shu-Shen;  Lue, Yan-Wu;  Liu, Xiang-Lin;  Yang, Shao-Yan 收藏  |  浏览/下载：12/0  |  提交时间：2019/05/12 Binding energy  Spin-orbit splitting  Hydrogenic donor impurity  Algan/gan   Design of shallow acceptors in zno through compensated donor-acceptor complexes: a density functional calculation 期刊论文 Physical review b, 2009, 卷号: 80, 期号: 15, 页码: 4 作者:  Gai, Yanqin;  Li, Jingbo;  Li, Shu-Shen;  Xia, Jian-Bai;  Yan, Yanfa 收藏  |  浏览/下载：28/0  |  提交时间：2019/05/12 Erratum to: binding energy and spin-orbit splitting of a hydrogenic donor impurity in algan/gan triangle-shaped potential quantum well 期刊论文 Nanoscale research letters, 2009, 卷号: 4, 期号: 12 作者:  Wang,Jun;  Lü,Yan-Wu;  Liu,Xiang-Lin;  Yang,Shao-Yan;  Zhu,Qin-Sheng 收藏  |  浏览/下载：15/0  |  提交时间：2019/05/12 Growth of (10(1)over-bar(3)over-bar) semipolar gan on m-plane sapphire by hydride vapor phase epitaxy 期刊论文 Journal of crystal growth, 2009, 卷号: 311, 期号: 17, 页码: 4153-4157 作者:  Wei, T. B.;  Hu, Q.;  Duan, R. F.;  Wei, X. C.;  Huo, Z. Q. 收藏  |  浏览/下载：26/0  |  提交时间：2019/05/12 Hrxrd  Pl  Stacking fault  Hvpe  Gan  Semipolar   Enhancement of conductivity and transmittance of zno films by post hydrogen plasma treatment 期刊论文 Journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: 6 作者:  Cai, P. F.;  You, J. B.;  Zhang, X. W.;  Dong, J. J.;  Yang, X. L. 收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12 Annealing  Carrier density  Carrier mobility  Diffusion  Electrical conductivity  Electrical resistivity  Hydrogen  Ii-vi semiconductors  Impurity states  Interstitials  Light transmission  Plasma materials processing  Semiconductor thin films  Sputter deposition  Vacancies (crystal)  Visible spectra  Wide band gap semiconductors  Zinc compounds   Linear rashba model of a hydrogenic donor impurity in gaas/gaalas quantum wells 期刊论文 Nanoscale research letters, 2009, 卷号: 4, 期号: 2, 页码: 178-180 作者:  Li, Shu-Shen;  Xia, Jian-Bai 收藏  |  浏览/下载：12/0  |  提交时间：2019/05/12 Growth of (10(1)over-bar(3)over-bar) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy 期刊论文 journal of crystal growth, 2009, 卷号: 311, 期号: 17, 页码: 4153-4157 作者:  Wei TB;  Wei XC;  Duan RF 收藏  |  浏览/下载：84/6  |  提交时间：2010/03/08 HRXRD  PL  Stacking fault  HVPE  GaN  Semipolar   Binding Energy and Spin-Orbit Splitting of a Hydrogenic Donor Impurity in AlGaN/GaN Triangle-Shaped Potential Quantum Well 期刊论文 nanoscale research letters, 2009, 卷号: 4, 期号: 11, 页码: 1315-1318 Wang J (Wang Jun); Li SS (Li Shu-Shen); Lu YW (Lue Yan-Wu); Liu XL (Liu Xiang-Lin); Yang SY (Yang Shao-Yan); Zhu QS (Zhu Qin-Sheng); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：277/95  |  提交时间：2010/03/08 Binding energy   Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment 期刊论文 journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713 作者:  Zhang XW;  You JB;  Yin ZG 收藏  |  浏览/下载：71/1  |  提交时间：2010/03/08 annealing  carrier density  carrier mobility  diffusion  electrical conductivity  electrical resistivity  hydrogen  II-VI semiconductors  impurity states  interstitials  light transmission  plasma materials processing  semiconductor thin films  sputter deposition  vacancies (crystal)  visible spectra  wide band gap semiconductors  zinc compounds   Design of shallow acceptors in ZnO through compensated donor-acceptor complexes: A density functional calculation 期刊论文 physical review b, 2009, 卷号: 80, 期号: 15, 页码: art.no.153201 Gai YQ (Gai, Yanqin); Li JB (Li, Jingbo); Li SS (Li, Shu-Shen); Xia JB (Xia, Jian-Bai); Yan YF (Yan, Yanfa); Wei SH (Wei, Su-Huai) 收藏  |  浏览/下载：132/34  |  提交时间：2010/03/08 INITIO MOLECULAR-DYNAMICS