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Spin states in InAs/AlSb/GaSb semiconductor quantum wells 期刊论文
physical review b, 2009, 卷号: 80, 期号: 3, 页码: art. no. 035303
作者:  Li J
收藏  |  浏览/下载:155/2  |  提交时间:2010/03/08
Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 017301
Guo LC; Wang XL; Xiao HL; Ran JX; Wang CM; Ma ZY; Luo WJ; Wang ZG
收藏  |  浏览/下载:193/43  |  提交时间:2010/03/08
Electronic structures and mechanical properties of uranium monocarbide from first-principles LDA plus U and GGA plus U calculations 期刊论文
physics letters a, 2009, 卷号: 373, 期号: 39, 页码: 3577-3581
Shi HL; Zhang P; Li SS; Sun B; Wang BT
收藏  |  浏览/下载:55/1  |  提交时间:2010/03/08
Structural, elastic, and electronic properties of cubic perovskite BaHfO3 obtained from first principles 期刊论文
physica b-condensed matter, 2009, 卷号: 404, 期号: 16, 页码: 2192-2196
Zhao HS; Chang AM; Wang YL
收藏  |  浏览/下载:56/1  |  提交时间:2010/03/08


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