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Semiconductor laser 专利
专利号: US7298769, 申请日期: 2007-11-20, 公开日期: 2007-11-20
作者:  WATATANI, CHIKARA;  TAKEMI, MASAYOSHI;  OKUNUKI, YUICHIRO
收藏  |  浏览/下载:18/0  |  提交时间:2020/01/13
Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) 专利
专利号: US7208770, 申请日期: 2007-04-24, 公开日期: 2007-04-24
作者:  KISH, JR., FRED A.;  HURTT, SHEILA;  JOYNER, CHARLES H.;  SCHNEIDER, RICHARD P.
收藏  |  浏览/下载:13/0  |  提交时间:2019/12/26
Generation and suppression of deep level defects in inp 期刊论文
Acta physica sinica, 2007, 卷号: 56, 期号: 3, 页码: 1476-1479
作者:  Zhao You-Wen;  Dong Zhi-Yuan
收藏  |  浏览/下载:22/0  |  提交时间:2019/05/12
Electron irradiation induced defects in high temperature annealed inp single crystal 期刊论文
Acta physica sinica, 2007, 卷号: 56, 期号: 3, 页码: 1603-1607
作者:  Wang Bo;  Zhao You-Wen;  Dong Zhi-Yuan;  Deng Ai-Hong;  Miao Shan-Shan
收藏  |  浏览/下载:18/0  |  提交时间:2019/05/12
Influence of deep level defects on electrical compensation in semi-insulating inp materials 期刊论文
Acta physica sinica, 2007, 卷号: 56, 期号: 2, 页码: 1167-1171
作者:  Yang Jun;  Zhao You-Wen;  Dong Zhi-Yuan;  Deng Ai-Hong;  Miao Shan-Shan
收藏  |  浏览/下载:21/0  |  提交时间:2019/05/12
Electron irradiation induced defects in high temperature annealed InP single crystal 期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 3, 页码: 1603-1607
Wang B (Wang Bo); Zhao YW (Zhao You-Wen); Dong ZY (Dong Zhi-Yuan); Deng AH (Deng Ai-Hong); Miao SS (Miao Shan-Shan); Yang J (Yang Jun)
收藏  |  浏览/下载:28/0  |  提交时间:2010/03/29
InP  
Influence of deep level defects on electrical compensation in semi-insulating InP materials 期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 2, 页码: 1167-1171
Yang, J (Yang Jun); Zhao, YW (Zhao You-Wen); Dong, ZY (Dong Zhi-Yuan); Deng, AH (Deng Ai-Hong); Miao, SS (Miao Shan-Shan); Wang, B (Wang Bo)
收藏  |  浏览/下载:31/0  |  提交时间:2010/03/29
InP  


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