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浏览/检索结果: 共18条，第1-10条 帮助 限定条件 发表日期：2006    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Thermal stress analysis for gainasp multiple quantum well wafer chemically bonded to si (100) 期刊论文 Journal of applied physics, 2006, 卷号: 100, 期号: 2, 页码: 8 作者:  Zhao, Hong-Quan;  Yu, Li-Juan;  Huang, Yong-Zhen 收藏  |  浏览/下载：17/0  |  提交时间：2019/05/12 Study on surface morphology of gan growth by mocvd on gan/si(111) template 期刊论文 Journal of rare earths, 2006, 卷号: 24, 页码: 11-13 作者:  Liu, Z;  Wang, JX;  Wang, XL;  Hu, GX;  Guo, LC 收藏  |  浏览/下载：14/0  |  提交时间：2019/05/12 Surface morphology  Gan/si template  Gan  Mocvd   Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template 会议论文 3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005 Liu, Z; Wang, JX; Wang, XL; Hu, GX; Guo, LC; Liu, HX; Li, JP; Li, JM; Zeng, YP 收藏  |  浏览/下载：224/40  |  提交时间：2010/03/29 surface morphology   Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy 期刊论文 journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 291-293 Cui LJ (Cui L. J.); Zeng YP (Zeng Y. P.); Wang BQ (Wang B. Q.); Zhu ZP (Zhu Z. P.) 收藏  |  浏览/下载：22/0  |  提交时间：2010/04/11 characterization  point defects  molecular beam epitaxy  semiconducting gallium compounds  semiconducting indium compounds  semiconducting ternary compounds  1.55 MU-M  QUANTUM-WELLS  TEMPERATURE  GAAS   Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition 期刊论文 thin solid films, 2006, 卷号: 497, 期号: 1-2, 页码: 157-162 Ai B; Shen H; Liang ZC; Chen Z; Kong GL; Liao XB 收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11 chemical vapour deposition  electrical properties and measurements  scanning electron microscopy  polycrystalline silicon  GRAIN-BOUNDARIES  STATES   Effect of GaAS(100) 2 degrees surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots 期刊论文 applied surface science, 2006, 卷号: 252, 期号: 23, 页码: 8126-8130 Liang S (Liang S.); Zhu HL (Zhu H. L.); Ye XL (Ye X. L.); Wang W (Wang W.) 收藏  |  浏览/下载：40/0  |  提交时间：2010/04/11 photoluminescence  quantum dots  indium arsenide  1.3 MU-M  CHEMICAL-VAPOR-DEPOSITION  PHASE-EPITAXY  GAAS  LUMINESCENCE  SUBSTRATE  ISLANDS  DENSITY  LASERS  LAYER   Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition 期刊论文 optical materials, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231 Wu JJ (Wu Jiejun); Han XX (Han Xiuxun); Li JM (Li Jiemin); Wei HY (Wei Hongyuan); Cong GW (Cong Guangwei); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping); Hu TD (Hu Tiandou); Wang HH (Wang Huanhua) 收藏  |  浏览/下载：51/0  |  提交时间：2010/04/11 in doping  cracks  Si(111) substrate  LT-AlGaN interlayer  metalorganic chemical vapor deposition  GaN  PHASE EPITAXY  INDIUM-SURFACTANT  OPTICAL-PROPERTIES  SI(111)  STRESS  FILMS   The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures 期刊论文 journal of crystal growth, 2006, 卷号: 289, 期号: 2, 页码: 415-418 Wang CM; Wang XL; Hu GX; Wang JX; Xiao HL; Li JP 收藏  |  浏览/下载：44/0  |  提交时间：2010/04/11 2DEG  MOCVD  semiconducting III-V materials  HEMT  power devices  HETEROSTRUCTURES  PASSIVATION  SAPPHIRE  ALGAN  FIELD  GAS   Enhancement of photoluminescence intensity of GaInNAs/GaAs quantum wells by two-step rapid thermal annealing 期刊论文 chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2579-2582 Zhao H (Zhao Huan); Xu YQ (Xu Ying-Qiang); Ni HQ (Ni Hai-Qiao); Han Q (Han Qin); Wu RH (Wu Rong-Han); Niu ZC (Niu Zhi-Chuan) 收藏  |  浏览/下载：44/0  |  提交时间：2010/04/11 MOLECULAR-BEAM EPITAXY  IMPROVED LUMINESCENCE EFFICIENCY  ORIGIN   Thermal stress analysis for GaInAsP multiple quantum well wafer chemically bonded to Si (100) 期刊论文 journal of applied physics, 2006, 卷号: 100, 期号: 2, 页码: art.no.023513 Zhao HQ (Zhao Hong-Quan); Yu LJ (Yu Li-Juan); Huang YZ (Huang Yong-Zhen) 收藏  |  浏览/下载：35/0  |  提交时间：2010/04/11 ACTIVATED BONDING METHOD  ROOM-TEMPERATURE  EPITAXIAL OVERGROWTHS  SURFACE  CRYSTAL  GAAS  TECHNOLOGY  ENERGY  FILMS