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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 发表日期：2006    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures 期刊论文 journal of crystal growth, 2006, 卷号: 289, 期号: 2, 页码: 415-418 Wang CM; Wang XL; Hu GX; Wang JX; Xiao HL; Li JP 收藏  |  浏览/下载：44/0  |  提交时间：2010/04/11 2DEG  MOCVD  semiconducting III-V materials  HEMT  power devices  HETEROSTRUCTURES  PASSIVATION  SAPPHIRE  ALGAN  FIELD  GAS   Self-consistent analysis of double-delta-doped InAlAs/InGaAs/InP HEMTs 期刊论文 chinese physics, 2006, 卷号: 15, 期号: 11, 页码: 2735-2741 Li DL (Li Dong-Lin); Zeng YP (Zeng Yi-Ping) 收藏  |  浏览/下载：33/0  |  提交时间：2010/04/11 two-dimensional electron gas  high electron mobility transistor  self-consistent calculation  InAlAs/InGaAs heterostructure  CHARGE CONTROL MODEL  ELECTRON-MOBILITY TRANSISTORS  PSEUDOMORPHIC INGAAS HEMT  FIELD-EFFECT TRANSISTOR  QUANTUM-WELL  ALGAAS/INGAAS PHEMTS  GATE RECESS  HIGH-SPEED  HETEROJUNCTION  CHANNEL   Magneto-transport characteristics of two-dimensional electron gas for Si delta-doped InAlAs/InGaAs single quantum well 期刊论文 acta physica sinica, 2006, 卷号: 55, 期号: 4, 页码: 2044-2048 Zhou WZ; Yao W; Zhu B; Qiu ZJ; Guo SL; Lin T; Cui LJ; Gui YS; Chu JH 收藏  |  浏览/下载：58/0  |  提交时间：2010/04/11 InAlAs/InGaAs single quantum well  SdH oscillation  two-dimensional electron gas  magneto-intersubband scattenng  ALLOY SCATTERING  HETEROJUNCTIONS  HEMTS  OSCILLATIONS  TRANSPORT   Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure 期刊论文 applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 762-765 Wang CM (Wang Cuimei); Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Wang JX (Wang Junxi); Li HP (Li Jianping); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：32/0  |  提交时间：2010/04/11 AlGaN/AlN/GaN  two-dimensional electron gas  MOCVD  ALGAN/GAN HETEROSTRUCTURES  POLARIZATION  TRANSISTORS  GANHEMTS  GAS   Study of persistent photoconductivity and subband electronic properties of the two-dimensional electron gas in modulation doped GaAs/AlGaAs structure 期刊论文 acta physica sinica, 2006, 卷号: 55, 期号: 3, 页码: 1379-1383 Shu Q; Shu YC; Zhang GJ; Liu RB; Yao JH; Pi B; Xing XD; Lin YW; Xu JJ; Wang ZG 收藏  |  浏览/下载：65/0  |  提交时间：2010/04/11 two-dimensional electron gas  quantum Hall effect  SdH oscillations  persistent photoconductivity  HETEROSTRUCTURES  ALXGA1-XAS  SCATTERING  LIFETIME  MOBILITY  GAAS  TE