Time-domain modulated free-carrier absorption measurements of recombination process in silicon wafers

CORC > 光电技术研究所 > 中国科学院光电技术研究所 > 薄膜光学技术研究室（十一室）

	Time-domain modulated free-carrier absorption measurements of recombination process in silicon wafers
	Gao, C ; Li, B ; Zhang, X
刊名	EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS
	2008
卷号	153 期号:1 页码:275-277 JAN
ISSN号	1951-6355
中文摘要	A time-domain modulated free-carrier absorption (MFCA) is developed both experimentally and theoretically to investigate the photo-carrier dynamics of silicon wafers illuminated by a square-wave-modulated super-band-gap laser beam. An explicit three-dimensional (3-D) theoretical expression for the temporal behavior of the MFCA signal is obtained by solving a 3-D carrier-diffusion equation The time-domain MFCA model is used to fit the experimental MFCA signals of p- and n-type Si wafers via a multi-parameter fitting procedure to determine simultaneously the electronic transport properties, that is, the bulk lifetime, the ambipolor diffusivity, and the front surface recombination velocity. The uncertainties of the fitted parameter values are estimated.
学科主题	光学薄膜技术
收录类别	SCI ; EI
语种	英语
公开日期	2015-12-24
内容类型	期刊论文
源URL	[http://ir.ioe.ac.cn/handle/181551/2063]
专题	光电技术研究所_薄膜光学技术研究室（十一室）
推荐引用方式 GB/T 7714	Gao, C,Li, B,Zhang, X. Time-domain modulated free-carrier absorption measurements of recombination process in silicon wafers[J]. EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS,2008,153(1):275-277 JAN.
APA	Gao, C,Li, B,&Zhang, X.(2008).Time-domain modulated free-carrier absorption measurements of recombination process in silicon wafers.EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS,153(1),275-277 JAN.
MLA	Gao, C,et al."Time-domain modulated free-carrier absorption measurements of recombination process in silicon wafers".EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS 153.1(2008):275-277 JAN.