Investigation of high-power sub-nanosecond GaAs photoconductive switches

CORC > 西安光学精密机械研究所 > 中国科学院西安光学精密机械研究所 > 瞬态光学技术国家重点实验室

	Investigation of high-power sub-nanosecond GaAs photoconductive switches
	Shi, W ; Zhao, W; Zhang, XB ; Li, EL
刊名	acta physica sinica
	2002-04-01
卷号	51 期号:4 页码:867-872
关键词	photoconductive semiconductor switches lock-on effect high power ultra-fast electrical pulse
其他题名	高功率亚纳秒gaas光电导开关的研究
英文摘要	experiments of an all-solid-state insulated lateral semi-insulating gaas photoconductive semiconductor switch(pcss) triggered by nano-second and pico-second laser pulses are reported. both linear and nonlinear modes of the 3 mm-gap and 8 mm-gap gaas pcss was observed when triggered by a nano-second laser. the current could be as high as 560a. the same device also revealed good temporal characteristics when trigger with a pico-second laser. the rising time of the pcss response is less than 200ps, which is limited by the coaxial cable.
WOS标题词	science & technology ; physical sciences
类目[WOS]	physics, multidisciplinary
研究领域[WOS]	physics
收录类别	SCI ; EI
语种	中文
WOS记录号	WOS:000174952500031
公开日期	2015-11-17
内容类型	期刊论文
源URL	[http://ir.opt.ac.cn/handle/181661/25450]
专题	西安光学精密机械研究所_瞬态光学技术国家重点实验室
作者单位	1.Xian Univ Technol, Dept Appl Phys, Xian 710048, Peoples R China 2.Chinese Acad Sci, State Key Lab Transient Opt & Technol, Xian Inst Opt & Fine Mech, Xian 710068, Peoples R China
推荐引用方式 GB/T 7714	Shi, W,Zhao, W,Zhang, XB,et al. Investigation of high-power sub-nanosecond GaAs photoconductive switches[J]. acta physica sinica,2002,51(4):867-872.
APA	Shi, W,Zhao, W,Zhang, XB,&Li, EL.(2002).Investigation of high-power sub-nanosecond GaAs photoconductive switches.acta physica sinica,51(4),867-872.
MLA	Shi, W,et al."Investigation of high-power sub-nanosecond GaAs photoconductive switches".acta physica sinica 51.4(2002):867-872.