Freezing of NO gateway emission by a magnetic field and very long field-free lifetimes of perturbed NO(a(4)Pi) levels

	Freezing of NO gateway emission by a magnetic field and very long field-free lifetimes of perturbed NO(a(4)Pi) levels
	Mo, Y ; Ottinger, C ; Shen, G
刊名	journal of chemical physics
	1998-07-01
卷号	109 期号:1 页码:151-156
英文摘要	the collision-induced emission from perturbed no(b (2)pi/a (4)pi) ("gateway") levels, previously studied by us using a beam/target gas cell configuration, was re-examined by crossing the no(a (4)pi) beam with a target gas jet. moving the observation point along the primary beam, spatially resolved no(b, v = 0 and 3) gateway emission profiles were recorded. two types of measurements were made: (a) applying a magnetic field at the collision zone, the b, v = 0 emission was quenched within the field, but reappeared at the field exit. this "freezing" confirms the mechanism of the gateway quenching as formulated earlier. (b) in the absence of a magnetic field, anomalously long radiative lifetimes were determined from both the v = 0 and v = 3 emission profiles. this direct observation of the long-lived eigenstate resulting from the perturbation is consistent with earlier measurements on the other, short-lived component. (c) 1998 american institute of physics. [s0021-9606(98)00825-3].
WOS标题词	science & technology ; physical sciences
类目[WOS]	physics, atomic, molecular & chemical
研究领域[WOS]	physics
关键词[WOS]	intramolecular energy-transfer ; collision-induced transitions ; triplet mixed states ; quantum interference ; n2(a' 5-sigma-g+) ; term energy ; 3-pi-g)
收录类别	SCI
语种	英语
WOS记录号	WOS:000075255300018
公开日期	2015-11-10
内容类型	期刊论文
源URL	[http://159.226.238.44/handle/321008/138125]
专题	大连化学物理研究所_中国科学院大连化学物理研究所
作者单位	1.Max Planck Inst Stromungsforsch, D-37073 Gottingen, Germany 2.Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Mol React Dynam, Dalian 116023, Peoples R China
推荐引用方式 GB/T 7714	Mo, Y,Ottinger, C,Shen, G. Freezing of NO gateway emission by a magnetic field and very long field-free lifetimes of perturbed NO(a(4)Pi) levels[J]. journal of chemical physics,1998,109(1):151-156.
APA	Mo, Y,Ottinger, C,&Shen, G.(1998).Freezing of NO gateway emission by a magnetic field and very long field-free lifetimes of perturbed NO(a(4)Pi) levels.journal of chemical physics,109(1),151-156.
MLA	Mo, Y,et al."Freezing of NO gateway emission by a magnetic field and very long field-free lifetimes of perturbed NO(a(4)Pi) levels".journal of chemical physics 109.1(1998):151-156.