MoOx and V2Ox as hole and electron transport layers through functionalized intercalation in normal and inverted organic optoelectronic devices

	MoOx and V2Ox as hole and electron transport layers through functionalized intercalation in normal and inverted organic optoelectronic devices
	Li, Xinchen 1; Xie, Fengxian 1; Zhang, Shaoqing 2; Hou, Jianhui 2; Choy, Wallace C. H.1
刊名	LIGHT-SCIENCE & APPLICATIONS
	2015-04-01
卷号	4
关键词	metal oxides carrier transport layers normal and inverted device architectures organic light-emitting diodes organic solar cells room-temperature solution process
英文摘要	To achieve fabrication and cost competitiveness in organic optoelectronic devices that include organic solar cells (OSCs) and organic light-emitting diodes (OLEDs), it is desirable to have one type of material that can simultaneously function as both the electron and hole transport layers (ETLs and HTLs) of the organic devices in all device architectures (i.e., normal and inverted architectures). We address this issue by proposing and demonstrating Cs-intercalated metal oxides (with various Cs mole ratios) as both the ETL and HTL of an organic optoelectronic device with normal and inverted device architectures. Our results demonstrate that the new approach works well for widely used transition metal oxides of molybdenum oxide (MoOx) and vanadium oxide (V2Ox). Moreover, the Cs-intercalated metal-oxide-based ETL and HTL can be easily formed under the conditions of a room temperature, water-free and solution-based process. These conditions favor practical applications of OSCs and OLEDs. Notably, with the analyses of the Kelvin Probe System, our approach of Cs-intercalated metal oxides with a wide mole ratio range of transition metals (Mo or V)/Cs from 1 : 0 to 1: 0.75 can offer significant and continuous work function tuning as large as 1.31 eV for functioning as both an ETL and HTL. Consequently, our method of intercalated metal oxides can contribute to the emerging large-scale and low-cost organic optoelectronic devices.
收录类别	SCI
语种	英语
公开日期	2015-11-03
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/28541]
专题	化学研究所_高分子物理与化学实验室
作者单位	1.Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China 2.Chinese Acad Sci, Inst Chem, Beijing 100190, Peoples R China
推荐引用方式 GB/T 7714	Li, Xinchen,Xie, Fengxian,Zhang, Shaoqing,et al. MoOx and V2Ox as hole and electron transport layers through functionalized intercalation in normal and inverted organic optoelectronic devices[J]. LIGHT-SCIENCE & APPLICATIONS,2015,4.
APA	Li, Xinchen,Xie, Fengxian,Zhang, Shaoqing,Hou, Jianhui,&Choy, Wallace C. H..(2015).MoOx and V2Ox as hole and electron transport layers through functionalized intercalation in normal and inverted organic optoelectronic devices.LIGHT-SCIENCE & APPLICATIONS,4.
MLA	Li, Xinchen,et al."MoOx and V2Ox as hole and electron transport layers through functionalized intercalation in normal and inverted organic optoelectronic devices".LIGHT-SCIENCE & APPLICATIONS 4(2015).