Thermally Stable Transparent Resistive Random Access Memory based on All-Oxide Heterostructures

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	Thermally Stable Transparent Resistive Random Access Memory based on All-Oxide Heterostructures
	Shang, Jie ; Liu, Gang ; Yang, Huali ; Zhu, Xiaojian ; Chen, Xinxin ; Tan, Hongwei ; Hu, Benlin ; Pan, Liang ; Xue, Wuhong ; Li, Run-Wei
刊名	ADVANCED FUNCTIONAL MATERIALS
	2014
卷号	24 期号:15 页码:2171
中文摘要	An all-oxide transparent resistive random access memory (T-RRAM) device based on hafnium oxide (HfOx) storage layer and indium-tin oxide (ITO) electrodes is fabricated in this work. The memory device demonstrates not only good optical transmittance but also a forming-free bipolar resistive switching behavior with room-temperature R-OFF/R-ON ratio of 45, excellent endurance of approximate to 5 x 10(7) cycles and long retention time over 10(6) s. More importantly, the HfOx based RRAM carries great ability of anti-thermal shock over a wide temperature range of 10 K to 490 K, and the high R-OFF/R-ON ratio of approximate to 40 can be well maintained under extreme working conditions. The field-induced electrochemical formation and rupture of the robust metal-rich conductive filaments in the mixed-structure hafnium oxide film are found to be responsible for the excellent resistance switching of the T-RRAM devices. The present all-oxide devices are of great potential for future thermally stable transparent electronic applications.
公开日期	2015-09-20
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/11886]
专题	宁波材料技术与工程研究所_2014专题
推荐引用方式 GB/T 7714	Shang, Jie,Liu, Gang,Yang, Huali,et al. Thermally Stable Transparent Resistive Random Access Memory based on All-Oxide Heterostructures[J]. ADVANCED FUNCTIONAL MATERIALS,2014,24(15):2171.
APA	Shang, Jie.,Liu, Gang.,Yang, Huali.,Zhu, Xiaojian.,Chen, Xinxin.,...&Li, Run-Wei.(2014).Thermally Stable Transparent Resistive Random Access Memory based on All-Oxide Heterostructures.ADVANCED FUNCTIONAL MATERIALS,24(15),2171.
MLA	Shang, Jie,et al."Thermally Stable Transparent Resistive Random Access Memory based on All-Oxide Heterostructures".ADVANCED FUNCTIONAL MATERIALS 24.15(2014):2171.