Surface Passivation Performance of Atomic-Layer-Deposited Al2O3 on p-type Silicon Substrates

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	Surface Passivation Performance of Atomic-Layer-Deposited Al2O3 on p-type Silicon Substrates
	Liu, Yanghui ; Zhu, Liqiang ; Guo, Liqiang ; Zhang, Hongliang ; Xiao, Hui
刊名	JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
	2014
卷号	30 期号:8 页码:835
中文摘要	Surface passivation performances of Al2O3 layers deposited on p-type Czochralski Si wafers by atomic layer deposition (ALD) were investigated as a function of post-deposition annealing conditions. The maximal minority carrier lifetime of similar to 4.7 ms was obtained for Al2O3 passivated p-type Si. Surface passivation mechanisms of Al2O3 layers were investigated in terms of interfacial state density (D-it) and negative fixed charge densities (Q(fix)) through capacitanceevoltage (C-V) characterization. High density of Q(fix) and low density of D-it were needed for high passivation performances, while high density of D-it and low density of Q(fix) degraded the passivation performances. A low D-it was a prerequisite to benefit from the strong field effect passivation induced by high density of negative fixed charges in the Al2O3 layer.
公开日期	2015-09-20
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/11791]
专题	宁波材料技术与工程研究所_2014专题
推荐引用方式 GB/T 7714	Liu, Yanghui,Zhu, Liqiang,Guo, Liqiang,et al. Surface Passivation Performance of Atomic-Layer-Deposited Al2O3 on p-type Silicon Substrates[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2014,30(8):835.
APA	Liu, Yanghui,Zhu, Liqiang,Guo, Liqiang,Zhang, Hongliang,&Xiao, Hui.(2014).Surface Passivation Performance of Atomic-Layer-Deposited Al2O3 on p-type Silicon Substrates.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,30(8),835.
MLA	Liu, Yanghui,et al."Surface Passivation Performance of Atomic-Layer-Deposited Al2O3 on p-type Silicon Substrates".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 30.8(2014):835.