Surface Passivation Performance of Atomic-Layer-Deposited Al2O3 on p-type Silicon Substrates | |
Liu, Yanghui ; Zhu, Liqiang ; Guo, Liqiang ; Zhang, Hongliang ; Xiao, Hui | |
刊名 | JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
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2014 | |
卷号 | 30期号:8页码:835 |
中文摘要 | Surface passivation performances of Al2O3 layers deposited on p-type Czochralski Si wafers by atomic layer deposition (ALD) were investigated as a function of post-deposition annealing conditions. The maximal minority carrier lifetime of similar to 4.7 ms was obtained for Al2O3 passivated p-type Si. Surface passivation mechanisms of Al2O3 layers were investigated in terms of interfacial state density (D-it) and negative fixed charge densities (Q(fix)) through capacitanceevoltage (C-V) characterization. High density of Q(fix) and low density of D-it were needed for high passivation performances, while high density of D-it and low density of Q(fix) degraded the passivation performances. A low D-it was a prerequisite to benefit from the strong field effect passivation induced by high density of negative fixed charges in the Al2O3 layer. |
公开日期 | 2015-09-20 |
内容类型 | 期刊论文 |
源URL | [http://ir.nimte.ac.cn/handle/174433/11791] ![]() |
专题 | 宁波材料技术与工程研究所_2014专题 |
推荐引用方式 GB/T 7714 | Liu, Yanghui,Zhu, Liqiang,Guo, Liqiang,et al. Surface Passivation Performance of Atomic-Layer-Deposited Al2O3 on p-type Silicon Substrates[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2014,30(8):835. |
APA | Liu, Yanghui,Zhu, Liqiang,Guo, Liqiang,Zhang, Hongliang,&Xiao, Hui.(2014).Surface Passivation Performance of Atomic-Layer-Deposited Al2O3 on p-type Silicon Substrates.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,30(8),835. |
MLA | Liu, Yanghui,et al."Surface Passivation Performance of Atomic-Layer-Deposited Al2O3 on p-type Silicon Substrates".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 30.8(2014):835. |
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