Forming-free resistive switching in a nanoporous nitrogen-doped carbon thin film with ready-made metal nanofilaments

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	Forming-free resistive switching in a nanoporous nitrogen-doped carbon thin film with ready-made metal nanofilaments
	Chen, Hao ; Zhuge, Fei ; Fu, Bing ; Li, Jun ; Wang, Jun ; Wang, Weigao ; Wang, Qin ; Li, Le ; Li, Fagen ; Zhang, Haolei ; Liang, Lingyan ; Luo, Hao ; Wang, Mei ; Gao, Junhua ; Cao, Hongtao ; Zhang, Hong ; Li, Zhicheng
刊名	CARBON
	2014
卷号	76 页码:459
中文摘要	An amorphous carbon thin film, with through-pores of several tens of nanometers in size, has been synthesized by annealing magnetron sputtered nitrogen-doped carbon thin films at elevated temperature in an inert atmosphere. Based on this nanoporous carbon film, we first report forming-free resistive switching in a two terminal device containing ready-made metal nanofilaments. Such nanoporous carbon-based resistance memory device shows low operation voltages and good endurance and retention performance. (C) 2014 Elsevier Ltd. All rights reserved.
公开日期	2015-09-20
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/11773]
专题	宁波材料技术与工程研究所_2014专题
推荐引用方式 GB/T 7714	Chen, Hao,Zhuge, Fei,Fu, Bing,et al. Forming-free resistive switching in a nanoporous nitrogen-doped carbon thin film with ready-made metal nanofilaments[J]. CARBON,2014,76:459.
APA	Chen, Hao.,Zhuge, Fei.,Fu, Bing.,Li, Jun.,Wang, Jun.,...&Li, Zhicheng.(2014).Forming-free resistive switching in a nanoporous nitrogen-doped carbon thin film with ready-made metal nanofilaments.CARBON,76,459.
MLA	Chen, Hao,et al."Forming-free resistive switching in a nanoporous nitrogen-doped carbon thin film with ready-made metal nanofilaments".CARBON 76(2014):459.