Global solution to the drift-diffusion-Poisson system for semiconductors with nonlinear recombination-generation rate

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	Global solution to the drift-diffusion-Poisson system for semiconductors with nonlinear recombination-generation rate
	Wu, Hao 1,2; Jiang, Jie 3
刊名	ASYMPTOTIC ANALYSIS
	2013
卷号	85 期号:1-2 页码:75-105
关键词	drift-diffusion-Poisson system global weak solution uniqueness long-time behavior
英文摘要	In this paper, we study the Cauchy problem of a time-dependent drift-diffusion-Poisson system for semiconductors. Existence and uniqueness of global weak solutions are proven for the system with a higher-order nonlinear recombination-generation rate R. We also show that the global weak solution will converge to a unique equilibrium as time tends to infinity.
WOS标题词	Science & Technology ; Physical Sciences
类目[WOS]	Mathematics, Applied
研究领域[WOS]	Mathematics
关键词[WOS]	LARGE TIME BEHAVIOR ; QUASI-NEUTRAL LIMIT ; ASYMPTOTIC-BEHAVIOR ; CARRIER TRANSPORT ; BASIC EQUATIONS ; EXISTENCE ; ENTROPY ; MODELS ; INEQUALITIES ; PLANCK
收录类别	SCI
语种	英语
WOS记录号	WOS:000325861000003
内容类型	期刊论文
源URL	[http://ir.wipm.ac.cn/handle/112942/802]
专题	武汉物理与数学研究所_数学物理与应用研究部
作者单位	1.Fudan Univ, Sch Math Sci, Shanghai 200433, Peoples R China 2.Fudan Univ, Shanghai Key Lab Contemporary Appl Math, Shanghai 200433, Peoples R China 3.Chinese Acad Sci, Wuhan Inst Phys & Math, Wuhan, Peoples R China
推荐引用方式 GB/T 7714	Wu, Hao,Jiang, Jie. Global solution to the drift-diffusion-Poisson system for semiconductors with nonlinear recombination-generation rate[J]. ASYMPTOTIC ANALYSIS,2013,85(1-2):75-105.
APA	Wu, Hao,&Jiang, Jie.(2013).Global solution to the drift-diffusion-Poisson system for semiconductors with nonlinear recombination-generation rate.ASYMPTOTIC ANALYSIS,85(1-2),75-105.
MLA	Wu, Hao,et al."Global solution to the drift-diffusion-Poisson system for semiconductors with nonlinear recombination-generation rate".ASYMPTOTIC ANALYSIS 85.1-2(2013):75-105.