Passive Q-switching in a diode-side-pumped Nd:YAG laser at 1.319 mu m
Yan, Shilian1; Zhang, Ling1; Yu, Haijuan1; Li, Menglong1; Sun, Wei1; Hou, Wei1; Lin, Xuechun1; Wang, Yonggang2; Wang, Yishan2
刊名optical engineering
2013-10-01
卷号52期号:10
关键词Q-switched carbon nanotube side-pumped
ISSN号0091-3286
产权排序2
英文摘要we demonstrated a passively q-switched nd:yag laser operating at 1.319 mu m using a transmission-type single-wall carbon nanotube (swcnt) as the saturable absorber. this is the first report on using swcnt as a q-switcher for 1.319 mu m nd:yag laser in a side-pumped configuration. a maximum output power of 780 mw was obtained with 1.15-mu s pulse duration and 42.7-khz repetition rate. (c) 2013 society of photo-optical instrumentation engineers (spie)
WOS标题词science & technology ; physical sciences
类目[WOS]optics
研究领域[WOS]optics
关键词[WOS]nanotube saturable absorber ; yag rod laser ; mode-locking ; microchip laser ; nd-yvo4 laser ; graphene ; cr4+yag ; nm
收录类别SCI ; EI
语种英语
WOS记录号WOS:000328254600063
内容类型期刊论文
源URL[http://ir.opt.ac.cn/handle/181661/23191]  
专题西安光学精密机械研究所_瞬态光学技术国家重点实验室
作者单位1.Chinese Acad Sci, Inst Semicond, Lab All Solid State Light Sources, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Xian Inst Opt & Precis Mech, State Key Lab Transient Opt & Photon, Xian 710119, Peoples R China
推荐引用方式
GB/T 7714
Yan, Shilian,Zhang, Ling,Yu, Haijuan,et al. Passive Q-switching in a diode-side-pumped Nd:YAG laser at 1.319 mu m[J]. optical engineering,2013,52(10).
APA Yan, Shilian.,Zhang, Ling.,Yu, Haijuan.,Li, Menglong.,Sun, Wei.,...&Wang, Yishan.(2013).Passive Q-switching in a diode-side-pumped Nd:YAG laser at 1.319 mu m.optical engineering,52(10).
MLA Yan, Shilian,et al."Passive Q-switching in a diode-side-pumped Nd:YAG laser at 1.319 mu m".optical engineering 52.10(2013).
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