Optical and electrical properties of p-type ZnO thin film post-treated by plasma-enhanced chemical vapor deposition

CORC > 长春光学精密机械与物理研究所 > 中国科学院长春光学精密机械与物理研究所 > 中科院长春光机所知识产出 > 会议论文

	Optical and electrical properties of p-type ZnO thin film post-treated by plasma-enhanced chemical vapor deposition
	Cao P. ; Bai Y. ; Qu Z.
	2014
会议名称	2014 International Conference on Mechatronics and Intelligent Materials, MIM 2014, May 18, 2014 - May 19, 2014
会议地点	Lijiang, China
页码	115-118
英文摘要	In this paper, the high quality p-type nitrogen-doped ZnO film was prepared by use of post-treated by plasma-enhanced chemical vapor deposition. The p-type ZnO with the hole density of 2.21016 was obtained. The converting from n-type to p-type was observed, which was obvious on the analysis of the optical and electrical properties of the p-type ZnO. Nitrogen was incorporated into ZnO film during the treatment process to occupy the oxygen positions, and also partly compensated some donor defects. When the amount of activated nitrogen exceeded those donor states to realize an effective compensation, the transformation from n-type to p-type happened. (2014) Trans Tech Publications, Switzerland.
收录类别	EI
会议录	2014 International Conference on Mechatronics and Intelligent Materials, MIM 2014, May 18, 2014 - May 19, 2014
会议录出版者	Trans Tech Publications Ltd
会议录出版地	Lijiang, China
语种	英语
内容类型	会议论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/44572]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文
推荐引用方式 GB/T 7714	Cao P.,Bai Y.,Qu Z.. Optical and electrical properties of p-type ZnO thin film post-treated by plasma-enhanced chemical vapor deposition[C]. 见:2014 International Conference on Mechatronics and Intelligent Materials, MIM 2014, May 18, 2014 - May 19, 2014. Lijiang, China.