Preparation of MgxZn1-xO/Au/MgxZn1-xO Multilayer Transparent Conductive Film and Studies of Its Photoelectric Properties

CORC > 长春光学精密机械与物理研究所 > 中国科学院长春光学精密机械与物理研究所 > 中科院长春光机所知识产出

	Preparation of MgxZn1-xO/Au/MgxZn1-xO Multilayer Transparent Conductive Film and Studies of Its Photoelectric Properties
	Lu S. S. ; Fang X. ; Wang J. Q. ; Fang F. ; Zhao H. F. ; Chu X. Y. ; Li J. H. ; Fang D. ; Tang J. L. ; Wei Z. P. ; Ma X. H. ; Wang X. H. ; Pu S. S. ; Xu L.
刊名	Spectroscopy and Spectral Analysis
	2014
卷号	34 期号:9 页码:2355-2359
ISSN号	ISBN/1000-0593
英文摘要	In the present paper, MgxZn1-xO and MgxZn1-xO/Au/MgxZn1-xO multilayer structures of transparent conductive film were prepared by the simple operation of sol-gel and RF magnetron sputtering method on quartz substrate respectively and then they were annealed. The surface, electrical, crystal and optical properties of the films at different annealing temperature were determined by UV-Vis spectrophotometer, X-ray diffraction, photoluminescence and Hall effect, respectively. The influence of annealing temperature on the films was also investigated. The testing results indicated that the films with good c-axis orientation presented hexagonal wurtzite structure. With increasing Mg components, the optical band gap of ZnO thin film increased gradually. There was an obvious blue shift phenomenon in PL spectrum and absorption spectrum line. But the electrical properties of the films declined. In MgxZn1-xO/Au/MgxZn1-xO multilayer structure of thin film samples, the existence of Au interlining led to the poor optical properties of thin film, and the light transmittance in the ultraviolet region was 60%. Compared with MgxZn1-xO film, the electrical properties of MgxZn1-xO/Au/MgxZn1-xO multilayer structure of transparent conductive film were improved, the resistivity and migration rate were significantly increased. In addition, high temperature annealing treatment could effectively improve the crystal quality of thin film and further improve the electrical characteristics of the samples. After the annealing treatment at 500 degrees C, migration rate of the film reached to 40. 9 cm(2).Vs(-1) while the resistivity was 0. 005 7 Omega.cm. Due to the rising of temperature, the crystal size increased from 25. 1 to 32. 4 nm to reduce the mobility of the film. Therefore, MgxZn1-xO/Au/MgxZn1-xO multilayer structure of transparent conductive film played an important role in promoting the ZnO transparent conductive film application in deep ultraviolet devices.
收录类别	SCI ; EI
语种	中文
公开日期	2015-05-27
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/44289]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Lu S. S.,Fang X.,Wang J. Q.,et al. Preparation of MgxZn1-xO/Au/MgxZn1-xO Multilayer Transparent Conductive Film and Studies of Its Photoelectric Properties[J]. Spectroscopy and Spectral Analysis,2014,34(9):2355-2359.
APA	Lu S. S..,Fang X..,Wang J. Q..,Fang F..,Zhao H. F..,...&Xu L..(2014).Preparation of MgxZn1-xO/Au/MgxZn1-xO Multilayer Transparent Conductive Film and Studies of Its Photoelectric Properties.Spectroscopy and Spectral Analysis,34(9),2355-2359.
MLA	Lu S. S.,et al."Preparation of MgxZn1-xO/Au/MgxZn1-xO Multilayer Transparent Conductive Film and Studies of Its Photoelectric Properties".Spectroscopy and Spectral Analysis 34.9(2014):2355-2359.