Synthesis of semimetal A(3)Bi (A = Na, K) thin films by molecular beam epitaxy

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	Synthesis of semimetal A(3)Bi (A = Na, K) thin films by molecular beam epitaxy
	J. ; Guo Wen, H. ; Yan, C. H. ; Wang, Z. Y. ; Chang, K. ; Deng, P. ; Zhang, T. ; Zhang, Z. D. ; Ji, S. H. ; Wang, L. L. ; He, K. ; Ma, X. C. ; Chen, X. ; Xue, Q. K.
刊名	Applied Surface Science
	2015
卷号	327 页码:213-217
关键词	Na3Bi K3Bi STM ARPES MBE 3-dimensional topological insulator single dirac cone electronic-structure graphene bi2te3 phase surface bi2se3 limit
ISSN号	0169-4332
原文出处	://WOS:000348453800029
公开日期	2015-05-08
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/73973]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	J.,Guo Wen, H.,Yan, C. H.,et al. Synthesis of semimetal A(3)Bi (A = Na, K) thin films by molecular beam epitaxy[J]. Applied Surface Science,2015,327:213-217.
APA	J..,Guo Wen, H..,Yan, C. H..,Wang, Z. Y..,Chang, K..,...&Xue, Q. K..(2015).Synthesis of semimetal A(3)Bi (A = Na, K) thin films by molecular beam epitaxy.Applied Surface Science,327,213-217.
MLA	J.,et al."Synthesis of semimetal A(3)Bi (A = Na, K) thin films by molecular beam epitaxy".Applied Surface Science 327(2015):213-217.