The d-p band-inversion topological insulator in bismuth-based skutterudites

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	The d-p band-inversion topological insulator in bismuth-based skutterudites
	Yang, M ; Liu, WM
刊名	SCIENTIFIC REPORTS
	2014
卷号	4
ISSN号	2045-2322
通讯作者	Liu, WM (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要	Skutterudites, a class of materials with cage-like crystal structure which have received considerable research interest in recent years, are the breeding ground of several unusual phenomena such as heavy fermion superconductivity, exciton-mediated superconducting state and Weyl fermions. Here, we predict a new topological insulator in bismuth-based skutterudites, in which the bands involved in the topological band-inversion process are d-and p-orbitals, which is distinctive with usual topological insulators, for instance in Bi2Se3 and BiTeI the bands involved in the topological band-inversion process are only p-orbitals. Due to the present of large d-electronic states, the electronic interaction in this topological insulator is much stronger than that in other conventional topological insulators. The stability of the new material is verified by binding energy calculation, phonon modes analysis, and the finite temperature molecular dynamics simulations. This new material can provide nearly zero-resistivity signal current for devices and is expected to be applied in spintronics devices.
资助信息	NKBRSFC [2011CB921502, 2012CB821305]; NSFC [61227902, 61378017]
语种	英语
公开日期	2015-04-14
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/59715]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Yang, M,Liu, WM. The d-p band-inversion topological insulator in bismuth-based skutterudites[J]. SCIENTIFIC REPORTS,2014,4.
APA	Yang, M,&Liu, WM.(2014).The d-p band-inversion topological insulator in bismuth-based skutterudites.SCIENTIFIC REPORTS,4.
MLA	Yang, M,et al."The d-p band-inversion topological insulator in bismuth-based skutterudites".SCIENTIFIC REPORTS 4(2014).