Improvement on InGaN-based light emitting diodes using p-GaN layer grown at low temperature in full N-2 environment

CORC > 物理研究所 > 物理所公开发表论文 > 期刊论文

	Improvement on InGaN-based light emitting diodes using p-GaN layer grown at low temperature in full N-2 environment
	Deng, Z ; Jiang, Y ; Zuo, P ; Fang, YT ; Ma, ZG ; Jia, HQ ; Zhou, JM ; Chen, H
刊名	PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
	2014
卷号	211 期号:5 页码:1175
关键词	efficiency droop GaN light emitting diodes low temperature p-GaN layer
ISSN号	1862-6300
通讯作者	Chen, H (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, 8,3rd South St, Beijing 100190, Peoples R China.
中文摘要	A method is suggested to improve the characteristics of light emitting diodes (LEDs) by using p-GaN structure with heavily Mg-doping grown at low temperature in full N-2 environment. The LED exhibits a 36.4% enhancement in light output power (LOP) at 222Acm(-2) due to the higher hole concentration as compared to the normal p-GaN layer. Meanwhile, the experimental results prove that the optimized LED structure shows reduced efficiency droop behavior, smaller peak wavelength blueshift and narrower electroluminescence (EL) spectrum broadening.
资助信息	National High Technology Research and Development Program of China [2011AA03A112, 2011AA03A106]; National Nature Science Foundation [11204360, 61210014]
语种	英语
公开日期	2015-04-14
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/59445]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Deng, Z,Jiang, Y,Zuo, P,et al. Improvement on InGaN-based light emitting diodes using p-GaN layer grown at low temperature in full N-2 environment[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2014,211(5):1175.
APA	Deng, Z.,Jiang, Y.,Zuo, P.,Fang, YT.,Ma, ZG.,...&Chen, H.(2014).Improvement on InGaN-based light emitting diodes using p-GaN layer grown at low temperature in full N-2 environment.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,211(5),1175.
MLA	Deng, Z,et al."Improvement on InGaN-based light emitting diodes using p-GaN layer grown at low temperature in full N-2 environment".PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 211.5(2014):1175.