Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide

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	Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide
	Nayak, AP ; Bhattacharyya, S ; Zhu, J ; Liu, J ; Wu, X ; Pandey, T ; Jin, CQ ; Singh, AK ; Akinwande, D ; Lin, JF
刊名	NATURE COMMUNICATIONS
	2014
卷号	5
ISSN号	2041-1723
通讯作者	Akinwande, D (reprint author), Univ Texas Austin, Dept Elect & Comp Engn, Austin, TX 78712 USA.
中文摘要	Molybdenum disulphide is a layered transition metal dichalcogenide that has recently raised considerable interest due to its unique semiconducting and opto-electronic properties. Although several theoretical studies have suggested an electronic phase transition in molybdenum disulphide, there has been a lack of experimental evidence. Here we report comprehensive studies on the pressure-dependent electronic, vibrational, optical and structural properties of multilayered molybdenum disulphide up to 35 GPa. Our experimental results reveal a structural lattice distortion followed by an electronic transition from a semiconducting to metallic state at similar to 19 GPa, which is confirmed by ab initio calculations. The metallization arises from the overlap of the valance and conduction bands owing to sulphur-sulphur interactions as the interlayer spacing reduces. The electronic transition affords modulation of the opto-electronic gain in molybdenum disulphide. This pressure-tuned behaviour can enable the development of novel devices with multiple phenomena involving the strong coupling of the mechanical, electrical and optical properties of layered nanomaterials.
资助信息	Energy Frontier Research in Extreme Environments (EFree); Defense Threat Reduction Agency (DTRA); National Science Foundation (NSF); Ministry of Science and Technology (MOST) of China; National Program on Micro and Smart Systems (NpMASS) [1:22]; DST Nanomission
语种	英语
公开日期	2015-04-14
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/59386]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Nayak, AP,Bhattacharyya, S,Zhu, J,et al. Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide[J]. NATURE COMMUNICATIONS,2014,5.
APA	Nayak, AP.,Bhattacharyya, S.,Zhu, J.,Liu, J.,Wu, X.,...&Lin, JF.(2014).Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide.NATURE COMMUNICATIONS,5.
MLA	Nayak, AP,et al."Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide".NATURE COMMUNICATIONS 5(2014).