Design and Synthesis of a New Layered Thermoelectric Material LaPbBiS3O

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	Design and Synthesis of a New Layered Thermoelectric Material LaPbBiS3O
	Sun, YL ; Ablimit, A ; Zhai, HF ; Bao, JK ; Tang, ZT ; Wang, XB ; Wang, NL ; Feng, CM ; Cao, GH
刊名	INORGANIC CHEMISTRY
	2014
卷号	53 期号:20 页码:11125
ISSN号	0020-1669
通讯作者	Cao, GH (reprint author), Zhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R China.
中文摘要	A new quinary oxysulfide LaPbBiS3O was designed and successfully synthesized via a solid-state reaction in a sealed evacuated quartz tube. This material, composed of stacked NaCl-like [M4S6] (where M = Pb, Bi) layers and fluorite-type [La2O2] layers, crystallizes in the tetragonal space group P4/nmm with a = 4.0982(1) angstrom, c = 19.7754(6) angstrom, and Z = 2. Electrical resistivity and Hall effect measurements demonstrate that it is a narrow gap semiconductor with an activation energy of similar to 17 meV. The thermopower and the figure of merit at room temperature were measured to be -52 mu V/K and 0.23, respectively, which makes LaPbBiS3O and its derivatives be promising for thermoelectric applications.
资助信息	Scholarship Award for Excellent Doctoral Student - Ministry of Education, NSF of China [11190023]; National Basic Research Program of China [2010CB923003, 2011CBA00103]; Fundamental Research Funds for the Central Universities of China [2013FZA3003]
语种	英语
公开日期	2015-04-14
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/59102]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Sun, YL,Ablimit, A,Zhai, HF,et al. Design and Synthesis of a New Layered Thermoelectric Material LaPbBiS3O[J]. INORGANIC CHEMISTRY,2014,53(20):11125.
APA	Sun, YL.,Ablimit, A.,Zhai, HF.,Bao, JK.,Tang, ZT.,...&Cao, GH.(2014).Design and Synthesis of a New Layered Thermoelectric Material LaPbBiS3O.INORGANIC CHEMISTRY,53(20),11125.
MLA	Sun, YL,et al."Design and Synthesis of a New Layered Thermoelectric Material LaPbBiS3O".INORGANIC CHEMISTRY 53.20(2014):11125.