MBE growth of high absorption mid-IR type-II InAs/GaSb superlattices

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	MBE growth of high absorption mid-IR type-II InAs/GaSb superlattices
	Wang, G ; Wang, L ; Chen, H ; Wang, WX ; Shi, ZW ; Chen, YL ; He, M ; Lu, PY ; Qian, WN
刊名	CHINESE SCIENCE BULLETIN
	2014
卷号	59 期号:20 页码:2383
关键词	InAs/GaSb superlatices High absorption Molecular beam epitaxy
ISSN号	1001-6538
通讯作者	He, M (reprint author), S China Normal Univ, Inst Optoelect Mat & Technol, Lab Nanophoton Funct Mat & Devices, Guangzhou 510631, Guangdong, Peoples R China.
中文摘要	Two kinds of short-period type II superlattices (SLs) InAs (6 monolayers (MLs))/GaSb (3 MLs) and InAs (8 MLs)/GaSb (8 MLs) which can serve for mid-infrared (MIR) detection have been grown by molecular beam epitaxy (MBE) on p-type GaSb (100) substrates. The cutoff wavelength for the two superlattices (SLs) was found to be around 4.8 A mu m at 300 K. The high resolution X-ray diffraction (HRXRD) measurements indicated that the InAs (8 MLs)/GaSb (8 MLs) SLs have better crystalline quality than that of the InAs (6 MLs)/GaSb (3 MLs) SLs. However, compared with infrared absorption in the 2.5-4.3 A mu m range, the optical absorption of InAs (6 MLs)/GaSb (3 MLs) SLs was more excellent. This can be attributed to increase probability of the electron and hole wave function overlap in the thinner period thickness.
资助信息	National High Technology Research and Development Program of China [2011AA03A112, 2011AA03A106, 2013AA03A101]; National Natural Science Foundation of China [11204360, 61210014]; Science & Technology Innovation Program of Guangdong Provincial Department of Education of China [2012CXZD0017]; Industry-Academia-Research Union Special Fund of Guangdong Province of China [2012B091000169]; Science & Technology Innovation Platform of Industry-Academia-Research Union of Guangdong Province-Ministry Cooperation Special Fund of China [2012B090600038]
语种	英语
公开日期	2015-04-14
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/59048]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Wang, G,Wang, L,Chen, H,et al. MBE growth of high absorption mid-IR type-II InAs/GaSb superlattices[J]. CHINESE SCIENCE BULLETIN,2014,59(20):2383.
APA	Wang, G.,Wang, L.,Chen, H.,Wang, WX.,Shi, ZW.,...&Qian, WN.(2014).MBE growth of high absorption mid-IR type-II InAs/GaSb superlattices.CHINESE SCIENCE BULLETIN,59(20),2383.
MLA	Wang, G,et al."MBE growth of high absorption mid-IR type-II InAs/GaSb superlattices".CHINESE SCIENCE BULLETIN 59.20(2014):2383.