Magnetoelectric transport and quantum interference effect in ultrathin manganite films

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	Magnetoelectric transport and quantum interference effect in ultrathin manganite films
	Wang, C ; Jin, KJ ; Gu, L ; Lu, HB ; Li, SM ; Zhou, WJ ; Zhao, RQ ; Guo, HZ ; He, M ; Yang, GZ
刊名	APPLIED PHYSICS LETTERS
	2014
卷号	104 期号:16
ISSN号	0003-6951
通讯作者	Jin, KJ (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要	The magnetoelectric transport behavior with respect to the thicknesses of ultrathin La0.9Sr0.1MnO3 films is investigated in detail. The metal-insulator phase transition, which has never been observed in bulk La0.9Sr0.1MnO3, is found in ultrathin films with thicknesses larger than 6 unit cells. Low-temperature resistivity minima appeared in films with thicknesses less than 10 unit cells. This is attributed to the presence of quantum interference effects. These data suggest that the influence of the weak localization becomes much pronounced as the film thickness decreases from 16 to 8 unit cells. (C) 2014 AIP Publishing LLC.
资助信息	National Basic Research Program of China [2012CB921403]; National Natural Science Foundation of China [10825418, 11134012, 11004238]; Shanghai Synchrotron Radiation Facility (SSRF)
语种	英语
公开日期	2015-04-14
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/58917]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Wang, C,Jin, KJ,Gu, L,et al. Magnetoelectric transport and quantum interference effect in ultrathin manganite films[J]. APPLIED PHYSICS LETTERS,2014,104(16).
APA	Wang, C.,Jin, KJ.,Gu, L.,Lu, HB.,Li, SM.,...&Yang, GZ.(2014).Magnetoelectric transport and quantum interference effect in ultrathin manganite films.APPLIED PHYSICS LETTERS,104(16).
MLA	Wang, C,et al."Magnetoelectric transport and quantum interference effect in ultrathin manganite films".APPLIED PHYSICS LETTERS 104.16(2014).