Photochemically Engineering the Metal-Semiconductor Interface for Room-Temperature Transfer Hydrogenation of Nitroarenes with Formic Acid

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	Photochemically Engineering the Metal-Semiconductor Interface for Room-Temperature Transfer Hydrogenation of Nitroarenes with Formic Acid
	Li, XH ; Cai, YY ; Gong, LH ; Fu, W ; Wang, KX ; Bao, HL ; Wei, X ; Chen, JS
刊名	CHEMISTRY-A EUROPEAN JOURNAL
	2014
卷号	20 期号:50 页码:16732—16737
关键词	AROMATIC NITRO-COMPOUNDS CATALYTIC-REDUCTION AMBIENT CONDITIONS TANDEM CATALYSIS GOLD CATALYSTS EFFICIENT NANOPARTICLES DECOMPOSITION GENERATION SUPPORTS
ISSN号	0947-6539
通讯作者	weixiao@sjtu.edu.cn ; chemcj@sjtu.edu.cn
英文摘要	A mild photochemical approach was applied to construct highly coupled metal-semiconductor dyads, which were found to efficiently facilitate the hydrogenation of nitrobenzene. Aniline was produced in excellent yield (>99 %, TOF: 1183) using formic acid as hydrogen source and water as solvent at room temperature. This general and green catalytic process is applicable to a wide range of nitroarenes without the involvement of high-pressure gases or sacrificial additives.
收录类别	SCI
语种	英语
WOS记录号	WOS:000346055800041
公开日期	2015-03-13
内容类型	期刊论文
源URL	[http://ir.sinap.ac.cn/handle/331007/14310]
专题	上海应用物理研究所_中科院上海应用物理研究所2011-2017年
推荐引用方式 GB/T 7714	Li, XH,Cai, YY,Gong, LH,et al. Photochemically Engineering the Metal-Semiconductor Interface for Room-Temperature Transfer Hydrogenation of Nitroarenes with Formic Acid[J]. CHEMISTRY-A EUROPEAN JOURNAL,2014,20(50):16732—16737.
APA	Li, XH.,Cai, YY.,Gong, LH.,Fu, W.,Wang, KX.,...&Chen, JS.(2014).Photochemically Engineering the Metal-Semiconductor Interface for Room-Temperature Transfer Hydrogenation of Nitroarenes with Formic Acid.CHEMISTRY-A EUROPEAN JOURNAL,20(50),16732—16737.
MLA	Li, XH,et al."Photochemically Engineering the Metal-Semiconductor Interface for Room-Temperature Transfer Hydrogenation of Nitroarenes with Formic Acid".CHEMISTRY-A EUROPEAN JOURNAL 20.50(2014):16732—16737.