Enhanced performance of InGaN light-emitting diodes with InGaN and composition-graded InGaN interlayers

	Enhanced performance of InGaN light-emitting diodes with InGaN and composition-graded InGaN interlayers
	Yang, YJ ; Zeng, YP
刊名	applied physics a-materials science & processing
	2014
卷号	116 期号:4 页码:1757-1760
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2015-04-02
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26281]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Yang, YJ,Zeng, YP. Enhanced performance of InGaN light-emitting diodes with InGaN and composition-graded InGaN interlayers[J]. applied physics a-materials science & processing,2014,116(4):1757-1760.
APA	Yang, YJ,&Zeng, YP.(2014).Enhanced performance of InGaN light-emitting diodes with InGaN and composition-graded InGaN interlayers.applied physics a-materials science & processing,116(4),1757-1760.
MLA	Yang, YJ,et al."Enhanced performance of InGaN light-emitting diodes with InGaN and composition-graded InGaN interlayers".applied physics a-materials science & processing 116.4(2014):1757-1760.