Enhanced performance of InGaN light-emitting diodes with InGaN and composition-graded InGaN interlayers | |
Yang, YJ ; Zeng, YP | |
刊名 | applied physics a-materials science & processing
![]() |
2014 | |
卷号 | 116期号:4页码:1757-1760 |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2015-04-02 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/26281] ![]() |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | Yang, YJ,Zeng, YP. Enhanced performance of InGaN light-emitting diodes with InGaN and composition-graded InGaN interlayers[J]. applied physics a-materials science & processing,2014,116(4):1757-1760. |
APA | Yang, YJ,&Zeng, YP.(2014).Enhanced performance of InGaN light-emitting diodes with InGaN and composition-graded InGaN interlayers.applied physics a-materials science & processing,116(4),1757-1760. |
MLA | Yang, YJ,et al."Enhanced performance of InGaN light-emitting diodes with InGaN and composition-graded InGaN interlayers".applied physics a-materials science & processing 116.4(2014):1757-1760. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论