Photoresponsive and Gas Sensing Field-Effect Transistors based on Multilayer WS2 Nanoflakes | |
Huo, NJ ; Yang, SX ; Wei, ZM ; Li, SS ; Xia, JB ; Li, JB | |
刊名 | scientific reports |
2014 | |
卷号 | 4页码:5209 |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2015-04-02 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/26387] |
专题 | 半导体研究所_半导体超晶格国家重点实验室 |
推荐引用方式 GB/T 7714 | Huo, NJ,Yang, SX,Wei, ZM,et al. Photoresponsive and Gas Sensing Field-Effect Transistors based on Multilayer WS2 Nanoflakes[J]. scientific reports,2014,4:5209. |
APA | Huo, NJ,Yang, SX,Wei, ZM,Li, SS,Xia, JB,&Li, JB.(2014).Photoresponsive and Gas Sensing Field-Effect Transistors based on Multilayer WS2 Nanoflakes.scientific reports,4,5209. |
MLA | Huo, NJ,et al."Photoresponsive and Gas Sensing Field-Effect Transistors based on Multilayer WS2 Nanoflakes".scientific reports 4(2014):5209. |
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