Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes | |
Wei, TB ; Ji, XL ; Wu, K ; Zheng, HY ; Du, CX ; Chen, Y ; Yan, QF ; Zhao, LX ; Zhou, Z ; Wang, JX ; Li, JM | |
刊名 | optics letters |
2014 | |
卷号 | 39期号:2页码:379-382 |
学科主题 | 半导体器件 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2015-03-25 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/26161] |
专题 | 半导体研究所_中科院半导体照明研发中心 |
推荐引用方式 GB/T 7714 | Wei, TB,Ji, XL,Wu, K,et al. Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes[J]. optics letters,2014,39(2):379-382. |
APA | Wei, TB.,Ji, XL.,Wu, K.,Zheng, HY.,Du, CX.,...&Li, JM.(2014).Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes.optics letters,39(2),379-382. |
MLA | Wei, TB,et al."Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes".optics letters 39.2(2014):379-382. |
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