AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency

	AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency
	Dong, P ; Yan, JC ; Zhang, Y ; Wang, JX ; Zeng, JP ; Geng, C ; Cong, PP ; Sun, LL ; Wei, TB ; Zhao, LX ; Yan, QF ; He, CG ; Qin, ZX ; Li, JM
刊名	journal of crystal growth
	2014
卷号	395 页码:9-13
学科主题	半导体器件
收录类别	SCI
语种	英语
公开日期	2015-03-25
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26207]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	Dong, P,Yan, JC,Zhang, Y,et al. AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency[J]. journal of crystal growth,2014,395:9-13.
APA	Dong, P.,Yan, JC.,Zhang, Y.,Wang, JX.,Zeng, JP.,...&Li, JM.(2014).AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency.journal of crystal growth,395,9-13.
MLA	Dong, P,et al."AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency".journal of crystal growth 395(2014):9-13.