Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography | |
Zhang, YH ; Wei, TB ; Xiong, Z ; Shang, L ; Tian, YD ; Zhao, Y ; Zhou, PY ; Wang, JX ; Li, JM | |
刊名 | applied physics letters |
2014 | |
卷号 | 105期号:1页码:013108 |
学科主题 | 半导体器件 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2015-03-25 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/26256] |
专题 | 半导体研究所_中科院半导体照明研发中心 |
推荐引用方式 GB/T 7714 | Zhang, YH,Wei, TB,Xiong, Z,et al. Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography[J]. applied physics letters,2014,105(1):013108. |
APA | Zhang, YH.,Wei, TB.,Xiong, Z.,Shang, L.,Tian, YD.,...&Li, JM.(2014).Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography.applied physics letters,105(1),013108. |
MLA | Zhang, YH,et al."Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography".applied physics letters 105.1(2014):013108. |
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