Enhancing optical power of GaN-based light-emitting diodes by nanopatterning on indium tin oxide with tunable fill factor using multiple-exposure nanosphere-lens lithography

	Enhancing optical power of GaN-based light-emitting diodes by nanopatterning on indium tin oxide with tunable fill factor using multiple-exposure nanosphere-lens lithography
	Zhang, Yonghui ; Wei, Tongbo ; Xiong, Zhuo ; Chen, Yu ; Zhen, Aigong ; Shan, Liang ; Zhao, Yun ; Hu, Qiang ; Li, Jinmin ; Wang, Junxi
刊名	journal of applied physics
	2014
卷号	116 期号:19 页码:194301
学科主题	半导体器件
收录类别	SCI
语种	英语
公开日期	2015-03-20
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26048]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	Zhang, Yonghui,Wei, Tongbo,Xiong, Zhuo,et al. Enhancing optical power of GaN-based light-emitting diodes by nanopatterning on indium tin oxide with tunable fill factor using multiple-exposure nanosphere-lens lithography[J]. journal of applied physics,2014,116(19):194301.
APA	Zhang, Yonghui.,Wei, Tongbo.,Xiong, Zhuo.,Chen, Yu.,Zhen, Aigong.,...&Wang, Junxi.(2014).Enhancing optical power of GaN-based light-emitting diodes by nanopatterning on indium tin oxide with tunable fill factor using multiple-exposure nanosphere-lens lithography.journal of applied physics,116(19),194301.
MLA	Zhang, Yonghui,et al."Enhancing optical power of GaN-based light-emitting diodes by nanopatterning on indium tin oxide with tunable fill factor using multiple-exposure nanosphere-lens lithography".journal of applied physics 116.19(2014):194301.