Investigation of Efficiency and Droop Behavior Comparison for InGaN/GaN Super Wide-Well Light Emitting Diodes Grown on Different Substrates

	Investigation of Efficiency and Droop Behavior Comparison for InGaN/GaN Super Wide-Well Light Emitting Diodes Grown on Different Substrates
	Wei, Tongbo ; Zhang, Lian ; Ji, Xiaoli ; Wang, Junxi ; Huo, Ziqiang ; Sun, Baojun ; Hu, Qiang ; Wei, Xuecheng ; Duan, Ruifei ; Zhao, Lixia ; Zeng, Yiping ; Li, Jinmin
刊名	ieee photonics journal
	2014
卷号	6 期号:6 页码:8200610
学科主题	半导体器件
收录类别	SCI
语种	英语
公开日期	2015-03-19
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26008]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	Wei, Tongbo,Zhang, Lian,Ji, Xiaoli,et al. Investigation of Efficiency and Droop Behavior Comparison for InGaN/GaN Super Wide-Well Light Emitting Diodes Grown on Different Substrates[J]. ieee photonics journal,2014,6(6):8200610.
APA	Wei, Tongbo.,Zhang, Lian.,Ji, Xiaoli.,Wang, Junxi.,Huo, Ziqiang.,...&Li, Jinmin.(2014).Investigation of Efficiency and Droop Behavior Comparison for InGaN/GaN Super Wide-Well Light Emitting Diodes Grown on Different Substrates.ieee photonics journal,6(6),8200610.
MLA	Wei, Tongbo,et al."Investigation of Efficiency and Droop Behavior Comparison for InGaN/GaN Super Wide-Well Light Emitting Diodes Grown on Different Substrates".ieee photonics journal 6.6(2014):8200610.