Significant quality improvement of GaN on Si upon formation of an AlN defective layer

	Significant quality improvement of GaN on Si upon formation of an AlN defective layer
	Feng, YX ; Wei, HY ; Yang, SY ; Zhang, H ; Kong, SS ; Zhao, GJ ; Liu, XL
刊名	crystengcomm
	2014
卷号	16 期号:32 页码:7525-7528
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2015-03-25
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26149]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Feng, YX,Wei, HY,Yang, SY,et al. Significant quality improvement of GaN on Si upon formation of an AlN defective layer[J]. crystengcomm,2014,16(32):7525-7528.
APA	Feng, YX.,Wei, HY.,Yang, SY.,Zhang, H.,Kong, SS.,...&Liu, XL.(2014).Significant quality improvement of GaN on Si upon formation of an AlN defective layer.crystengcomm,16(32),7525-7528.
MLA	Feng, YX,et al."Significant quality improvement of GaN on Si upon formation of an AlN defective layer".crystengcomm 16.32(2014):7525-7528.