Thickness influence of thermal oxide layers on the formation of self-catalyzed InAs nanowires on Si(111) by MOCVD | |
Wang, XY ; Yang, XG ; Du, WN ; Ji, HM ; Luo, S ; Yang, T | |
刊名 | journal of crystal growth
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2014 | |
卷号 | 395页码:55-60 |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2015-03-25 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/26213] ![]() |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | Wang, XY,Yang, XG,Du, WN,et al. Thickness influence of thermal oxide layers on the formation of self-catalyzed InAs nanowires on Si(111) by MOCVD[J]. journal of crystal growth,2014,395:55-60. |
APA | Wang, XY,Yang, XG,Du, WN,Ji, HM,Luo, S,&Yang, T.(2014).Thickness influence of thermal oxide layers on the formation of self-catalyzed InAs nanowires on Si(111) by MOCVD.journal of crystal growth,395,55-60. |
MLA | Wang, XY,et al."Thickness influence of thermal oxide layers on the formation of self-catalyzed InAs nanowires on Si(111) by MOCVD".journal of crystal growth 395(2014):55-60. |
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