High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes

	High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes
	Kang, H ; Wang, Q ; Xiao, HL ; Wang, CM ; Jiang, LJ ; Feng, C ; Chen, H ; Yin, HB ; Wang, XL ; Wang, ZG ; Hou, X
刊名	chinese physics letters
	2014
卷号	31 期号:6 页码:068502
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2015-03-25
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26171]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Kang, H,Wang, Q,Xiao, HL,et al. High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes[J]. chinese physics letters,2014,31(6):068502.
APA	Kang, H.,Wang, Q.,Xiao, HL.,Wang, CM.,Jiang, LJ.,...&Hou, X.(2014).High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes.chinese physics letters,31(6),068502.
MLA	Kang, H,et al."High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes".chinese physics letters 31.6(2014):068502.