Enhanced performance of InGaN light-emitting diodes with InGaN/GaN supperlattice and graded-composition InGaN/GaN supperlattice interlayers | |
Yang, YJ ; Zeng, YP | |
刊名 | physica status solidi a-applications and materials science
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2014 | |
卷号 | 211期号:7页码:1640-1644 |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2015-03-25 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/26261] ![]() |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | Yang, YJ,Zeng, YP. Enhanced performance of InGaN light-emitting diodes with InGaN/GaN supperlattice and graded-composition InGaN/GaN supperlattice interlayers[J]. physica status solidi a-applications and materials science,2014,211(7):1640-1644. |
APA | Yang, YJ,&Zeng, YP.(2014).Enhanced performance of InGaN light-emitting diodes with InGaN/GaN supperlattice and graded-composition InGaN/GaN supperlattice interlayers.physica status solidi a-applications and materials science,211(7),1640-1644. |
MLA | Yang, YJ,et al."Enhanced performance of InGaN light-emitting diodes with InGaN/GaN supperlattice and graded-composition InGaN/GaN supperlattice interlayers".physica status solidi a-applications and materials science 211.7(2014):1640-1644. |
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