Enhanced performance of InGaN light-emitting diodes with InGaN/GaN supperlattice and graded-composition InGaN/GaN supperlattice interlayers

	Enhanced performance of InGaN light-emitting diodes with InGaN/GaN supperlattice and graded-composition InGaN/GaN supperlattice interlayers
	Yang, YJ ; Zeng, YP
刊名	physica status solidi a-applications and materials science
	2014
卷号	211 期号:7 页码:1640-1644
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2015-03-25
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26261]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Yang, YJ,Zeng, YP. Enhanced performance of InGaN light-emitting diodes with InGaN/GaN supperlattice and graded-composition InGaN/GaN supperlattice interlayers[J]. physica status solidi a-applications and materials science,2014,211(7):1640-1644.
APA	Yang, YJ,&Zeng, YP.(2014).Enhanced performance of InGaN light-emitting diodes with InGaN/GaN supperlattice and graded-composition InGaN/GaN supperlattice interlayers.physica status solidi a-applications and materials science,211(7),1640-1644.
MLA	Yang, YJ,et al."Enhanced performance of InGaN light-emitting diodes with InGaN/GaN supperlattice and graded-composition InGaN/GaN supperlattice interlayers".physica status solidi a-applications and materials science 211.7(2014):1640-1644.