Effects of quantum well number on spectral response of InGaN/GaN multiple quantum well solar cells

	Effects of quantum well number on spectral response of InGaN/GaN multiple quantum well solar cells
	Yang, J ; Zhao, DG ; Jiang, DS ; Chen, P ; Liu, ZS ; Le, LC ; He, XG ; Li, XJ ; Yang, H
刊名	physica status solidi a-applications and materials science
	2014
卷号	211 期号:9 页码:2157-2160
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2015-03-25
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26200]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	Yang, J,Zhao, DG,Jiang, DS,et al. Effects of quantum well number on spectral response of InGaN/GaN multiple quantum well solar cells[J]. physica status solidi a-applications and materials science,2014,211(9):2157-2160.
APA	Yang, J.,Zhao, DG.,Jiang, DS.,Chen, P.,Liu, ZS.,...&Yang, H.(2014).Effects of quantum well number on spectral response of InGaN/GaN multiple quantum well solar cells.physica status solidi a-applications and materials science,211(9),2157-2160.
MLA	Yang, J,et al."Effects of quantum well number on spectral response of InGaN/GaN multiple quantum well solar cells".physica status solidi a-applications and materials science 211.9(2014):2157-2160.