Correlation between the structural and cathodoluminescence properties in InGaN/GaN multiple quantum wells with large number of quantum wells | |
Yang, J ; Zhao, DG ; Jiang, DS ; Jahn, U ; Chen, P ; Zhu, JJ ; Liu, ZS ; Le, LC ; He, XG ; Li, XJ ; Wang, H ; Yang, H | |
刊名 | journal of vacuum science & technology a |
2014 | |
卷号 | 32期号:5页码:051503 |
学科主题 | 光电子学 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2015-03-25 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/26196] |
专题 | 半导体研究所_光电子研究发展中心 |
推荐引用方式 GB/T 7714 | Yang, J,Zhao, DG,Jiang, DS,et al. Correlation between the structural and cathodoluminescence properties in InGaN/GaN multiple quantum wells with large number of quantum wells[J]. journal of vacuum science & technology a,2014,32(5):051503. |
APA | Yang, J.,Zhao, DG.,Jiang, DS.,Jahn, U.,Chen, P.,...&Yang, H.(2014).Correlation between the structural and cathodoluminescence properties in InGaN/GaN multiple quantum wells with large number of quantum wells.journal of vacuum science & technology a,32(5),051503. |
MLA | Yang, J,et al."Correlation between the structural and cathodoluminescence properties in InGaN/GaN multiple quantum wells with large number of quantum wells".journal of vacuum science & technology a 32.5(2014):051503. |
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