Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature

	Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature
	He Chao ; Liu Zhi ; Zhang Xu ; Huang Wen-Qi ; Xue Chun-Lai ; Cheng Bu-Wen
刊名	chinese physics b
	2014
卷号	23 期号:11 页码:116103
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2015-03-20
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26093]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	He Chao,Liu Zhi,Zhang Xu,et al. Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature[J]. chinese physics b,2014,23(11):116103.
APA	He Chao,Liu Zhi,Zhang Xu,Huang Wen-Qi,Xue Chun-Lai,&Cheng Bu-Wen.(2014).Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature.chinese physics b,23(11),116103.
MLA	He Chao,et al."Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature".chinese physics b 23.11(2014):116103.