Reconstruction of thermal boundary resistance and intrinsic thermal   conductivity of SiO2-GaN-sapphire structure and temperature dependence

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 测试分析平台

	Reconstruction of thermal boundary resistance and intrinsic thermal conductivity of SiO2-GaN-sapphire structure and temperature dependence
	Xu, K (徐科)
刊名	INTERNATIONAL JOURNAL OF THERMAL SCIENCES
	2015
卷号	87 期号:0 页码:178-186
关键词	Thermal boundary resistance 3 omega method Near-interface effect Phonon inelastic scattering Thermal impedance
通讯作者	Wang, ZL (Wang, Zhaoliang)
英文摘要	The thermal boundary resistance (TBR) between SiO2-GaN film-sapphire is reconstructed by 3 omega method in the temperature range of 260-480 K. The TBR at SiO2/GaN film interface is obtained on different samples with different thickness SiO2 films at high frequency of 1 KHz-20 KHz and the TBR at GaN film/sapphire interface is isolated by extending the frequency to a wide range. The measured TBR with strong temperature dependence at GaN film/sapphire interface increases with increasing temperature, and is found to be 1.02 x 10(-7) m(2) K W-1 at room temperature. The measured TBR with weak temperature dependence at SiO2/GaN film interface decreases with increasing temperature. The temperature dependence of the TBR differs appreciably from the predicted trend by phonon inelastic scattering model and may be affected partially by the lack of some sources of inelastic boundary scattering and the increased diffusive boundary scattering. The predicted results corrected by phonon attenuation process agree well with the experimental values especially at high temperature. The temperature dependence and the larger value of the TBR contain contributions from the near-interface effect including the real boundary between the GaN film and its adjacent layers and the phonon inelastic scattering near the interface region. (C) 2014 Elsevier Masson SAS. All rights reserved.
收录类别	SCI
语种	英语
公开日期	2015-01-16
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/1728]
专题	苏州纳米技术与纳米仿生研究所_测试分析平台
推荐引用方式 GB/T 7714	Xu, K . Reconstruction of thermal boundary resistance and intrinsic thermal conductivity of SiO2-GaN-sapphire structure and temperature dependence[J]. INTERNATIONAL JOURNAL OF THERMAL SCIENCES,2015,87(0):178-186.
APA	Xu, K .(2015).Reconstruction of thermal boundary resistance and intrinsic thermal conductivity of SiO2-GaN-sapphire structure and temperature dependence.INTERNATIONAL JOURNAL OF THERMAL SCIENCES,87(0),178-186.
MLA	Xu, K ."Reconstruction of thermal boundary resistance and intrinsic thermal conductivity of SiO2-GaN-sapphire structure and temperature dependence".INTERNATIONAL JOURNAL OF THERMAL SCIENCES 87.0(2015):178-186.