Experimental study on single event latchup of SRAM K6R4016V1D and its protection | |
Yu, Yong-Tao ; Feng, Guo-Qiang ; Chen, Rui ; Shangguan, Shi-Peng ; Han, Jian-Wei | |
刊名 | Yuanzineng Kexue Jishu/Atomic Energy Science and Technology
![]() |
2012 | |
卷号 | 46期号:SUPPL. 1页码:587-591 |
ISSN号 | 1000-6931 |
通讯作者 | 北京8701信箱 |
中文摘要 | Pulsed laser single event effects (PLSEE) facility was used to study single event latchup sensitivities of Samsung SRAM K6R4016V1D. The SEL threshold energy, cross section and current of the SRAM were obtained from the test. Current-limiting resistance and power cycling, which are commonly used in the engineering application, were also studied for the SRAM. The results show that SEL threshold energy is very low and SEL saturation cross section is very high for the SRAM. The SRAM is extremely susceptible to the radiation in the space. |
学科主题 | 空间环境 |
收录类别 | EI |
语种 | 中文 |
公开日期 | 2014-12-15 |
内容类型 | 期刊论文 |
源URL | [http://ir.nssc.ac.cn/handle/122/2857] ![]() |
专题 | 国家空间科学中心_保障部/保障与试验验证中心 |
推荐引用方式 GB/T 7714 | Yu, Yong-Tao,Feng, Guo-Qiang,Chen, Rui,et al. Experimental study on single event latchup of SRAM K6R4016V1D and its protection[J]. Yuanzineng Kexue Jishu/Atomic Energy Science and Technology,2012,46(SUPPL. 1):587-591. |
APA | Yu, Yong-Tao,Feng, Guo-Qiang,Chen, Rui,Shangguan, Shi-Peng,&Han, Jian-Wei.(2012).Experimental study on single event latchup of SRAM K6R4016V1D and its protection.Yuanzineng Kexue Jishu/Atomic Energy Science and Technology,46(SUPPL. 1),587-591. |
MLA | Yu, Yong-Tao,et al."Experimental study on single event latchup of SRAM K6R4016V1D and its protection".Yuanzineng Kexue Jishu/Atomic Energy Science and Technology 46.SUPPL. 1(2012):587-591. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论