Experimental study on single event latchup of SRAM K6R4016V1D and its protection

CORC > 国家空间科学中心 > 中国科学院国家空间科学中心 > 保障部/保障与试验验证中心

	Experimental study on single event latchup of SRAM K6R4016V1D and its protection
	Yu, Yong-Tao ; Feng, Guo-Qiang ; Chen, Rui ; Shangguan, Shi-Peng ; Han, Jian-Wei
刊名	Yuanzineng Kexue Jishu/Atomic Energy Science and Technology
	2012
卷号	46 期号:SUPPL. 1 页码:587-591
ISSN号	1000-6931
通讯作者	北京8701信箱
中文摘要	Pulsed laser single event effects (PLSEE) facility was used to study single event latchup sensitivities of Samsung SRAM K6R4016V1D. The SEL threshold energy, cross section and current of the SRAM were obtained from the test. Current-limiting resistance and power cycling, which are commonly used in the engineering application, were also studied for the SRAM. The results show that SEL threshold energy is very low and SEL saturation cross section is very high for the SRAM. The SRAM is extremely susceptible to the radiation in the space.
学科主题	空间环境
收录类别	EI
语种	中文
公开日期	2014-12-15
内容类型	期刊论文
源URL	[http://ir.nssc.ac.cn/handle/122/2857]
专题	国家空间科学中心_保障部/保障与试验验证中心
推荐引用方式 GB/T 7714	Yu, Yong-Tao,Feng, Guo-Qiang,Chen, Rui,et al. Experimental study on single event latchup of SRAM K6R4016V1D and its protection[J]. Yuanzineng Kexue Jishu/Atomic Energy Science and Technology,2012,46(SUPPL. 1):587-591.
APA	Yu, Yong-Tao,Feng, Guo-Qiang,Chen, Rui,Shangguan, Shi-Peng,&Han, Jian-Wei.(2012).Experimental study on single event latchup of SRAM K6R4016V1D and its protection.Yuanzineng Kexue Jishu/Atomic Energy Science and Technology,46(SUPPL. 1),587-591.
MLA	Yu, Yong-Tao,et al."Experimental study on single event latchup of SRAM K6R4016V1D and its protection".Yuanzineng Kexue Jishu/Atomic Energy Science and Technology 46.SUPPL. 1(2012):587-591.